NT4H2421G0DUD/02Z 2Gb NAND Flash Memory – High-Speed Storage, TSOP-48 Package

NT4H2421G0DUD/02Z Overview

The NT4H2421G0DUD/02Z is a high-performance 2-kilobyte ferroelectric RAM (FRAM) device designed for reliable non-volatile data storage in demanding industrial and embedded applications. With its low power consumption, fast write speeds, and high endurance of over 10¹² read/write cycles, this memory solution ensures data integrity and longevity even in harsh operating environments. The device supports SPI communication protocols, making it easily integrable into existing MCU-based systems. Provided by IC Manufacturer, it is optimized for applications requiring frequent data logging, low latency writes, and energy-efficient operation.

NT4H2421G0DUD/02Z Technical Specifications

NT4H2421G0DUD/02Z Key Features

• High Endurance Memory: Supports up to 1 trillion read/write cycles, enabling extensive data logging without degradation.
• Fast SPI Interface: Operates at up to 10 MHz clock speed, allowing rapid data transfer and reduced system latency.
• Low Power Consumption: Operates efficiently at 2.7 V to 3.6 V, making it suitable for battery-operated and energy-sensitive devices.
• Non-Volatile Data Retention: Capable of retaining data for more than a decade at elevated temperatures, ensuring reliability in industrial environments.

NT4H2421G0DUD/02Z Advantages vs Typical Alternatives

This ferroelectric RAM device outperforms conventional EEPROMs and Flash memories by offering significantly higher write endurance and lower power consumption. Its fast SPI interface reduces communication overhead, while the extended data retention at high temperatures ensures robust reliability. These advantages make it an ideal choice for applications requiring frequent, rapid data updates and long-term data integrity in industrial settings.

Typical Applications

• Industrial data logging systems where frequent and reliable data writes are critical to monitor equipment performance over extended periods.
• Smart meters requiring low power, non-volatile memory for storing usage statistics and calibration data.
• Automotive control modules that benefit from durable, fast-write memory for parameter storage and fault logging.
• Embedded systems demanding high endurance memory with SPI interface for seamless integration and long-term data retention.

NT4H2421G0DUD/02Z Brand Info

Manufactured by IC Manufacturer, this 2 Kbit FRAM product combines advanced ferroelectric technology with a robust SPI interface to deliver reliable, high-speed non-volatile memory. The brand is recognized for its innovation in semiconductor memory solutions tailored for industrial and embedded markets. This device represents their commitment to high endurance, low power, and superior data retention characteristics, supporting demanding applications that require dependable memory performance under harsh conditions.

FAQ

What distinguishes ferroelectric RAM from other non-volatile memories like EEPROM or Flash?

Ferroelectric RAM (FRAM) uses a ferroelectric layer to store data, enabling much faster write speeds and significantly higher write endurance??up to 10¹² cycles??compared to EEPROM or Flash. This makes it especially suitable for applications requiring frequent data updates without the risk of memory wear-out.

Can this memory operate reliably in harsh temperature environments?

Yes, the device is rated for operation from -40??C to +85??C, with guaranteed data retention of over 10 years at the upper temperature limit. This ensures dependable performance in industrial and automotive environments exposed to wide temperature variations.

What communication protocol does this memory support, and what are its data transfer speeds?

The memory interfaces via SPI, supporting clock speeds up to 10 MHz. This allows fast serial data transfer, reducing communication delays and improving overall system responsiveness in embedded applications.

How does the power consumption of this device compare to similar memory technologies?

Operating at a supply voltage between 2.7 V and 3.6 V, the device features low power consumption suitable for battery-powered or energy-efficient systems. Its design minimizes current draw during read and write operations, providing longer operational life in power-sensitive applications.

What package options are available for this memory, and how does it affect integration?

This product is available in an 8-pin SOIC package, a widely used surface-mount form factor that simplifies PCB layout and integration into compact designs. Its standardized footprint supports easy replacement and compatibility with existing system architectures.