NT2L1011G0DUDZ Overview
The NT2L1011G0DUDZ is a high-performance semiconductor device designed for efficient power management and signal processing in industrial and automotive applications. Engineered for robustness and precision, this component offers low on-resistance and fast switching capabilities that enhance system efficiency and reliability. Its compact footprint and optimized thermal characteristics make it ideal for space-constrained designs requiring dependable operation under demanding electrical conditions. Sourced from a trusted supplier, this device supports engineers and sourcing specialists in delivering scalable and cost-effective solutions. For more information, visit IC Manufacturer.
NT2L1011G0DUDZ Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 11 A |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 3.0 V |
| RDS(on) (Max) | 0.041 ?? @ VGS=10 V |
| Total Gate Charge (Qg) | 22 nC |
| Power Dissipation (PD) | 45 W |
| Package Type | TO-252 (DPAK) |
| Operating Temperature Range | -55??C to +150??C |
NT2L1011G0DUDZ Key Features
- Low On-Resistance: Minimizes conduction losses to improve overall power efficiency, which is critical in high-current switching applications.
- High Drain Current Capacity: Supports continuous currents up to 11 A, suitable for demanding load conditions in automotive and industrial circuits.
- Fast Switching Speed: Enables rapid transition times to reduce switching losses, enhancing system responsiveness and thermal management.
- Thermally Efficient Package: The TO-252 (DPAK) package assists in effective heat dissipation, ensuring reliable operation in harsh environments.
- Wide Operating Temperature Range: Functions reliably from -55??C to +150??C, making it adaptable to diverse and extreme operating conditions.
NT2L1011G0DUDZ Advantages vs Typical Alternatives
This device offers superior on-resistance and higher current handling compared to typical MOSFET alternatives, resulting in enhanced efficiency and reduced thermal stress. Its optimized gate charge facilitates lower switching losses, making it advantageous for applications requiring fast and frequent switching. Additionally, the robust thermal performance and industry-standard packaging provide improved reliability and easier integration into existing designs.
🔥 Best-Selling Products
-
Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
-
Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
-
Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
-
Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- Automotive power switching systems where high current and voltage capability combine with low thermal resistance to ensure durability and efficiency in harsh environments.
- Industrial motor control circuits requiring fast switching and high current handling to maintain precise operation and energy savings.
- Power management modules in consumer electronics that benefit from low on-resistance and compact package size for space-sensitive designs.
- DC-DC converters and voltage regulators where efficient switching and thermal performance directly impact overall system reliability and performance.
NT2L1011G0DUDZ Brand Info
The NT2L1011G0DUDZ is produced by a reputable semiconductor manufacturer known for delivering high-quality MOSFETs tailored for industrial and automotive markets. This product reflects the company??s commitment to innovation and reliability, providing engineers with components that meet stringent performance and durability standards. The brand??s extensive experience in power semiconductor technologies ensures that this device integrates seamlessly into demanding electronic systems.
FAQ
What type of MOSFET is the NT2L1011G0DUDZ?
This device is an N-Channel MOSFET designed for power switching applications. It features a high voltage rating and low on-resistance, making it suitable for a wide range of industrial and automotive power management tasks.
🌟 Featured Products
-
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
-
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
-
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
-
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
What is the maximum continuous drain current supported?
The MOSFET can handle a continuous drain current of up to 11 A, which enables it to drive relatively high load currents reliably without significant thermal degradation.
How does the package type affect device performance?
The TO-252 (DPAK) package provides efficient thermal conduction and is well-suited for surface mounting. Its design helps to dissipate heat effectively, which enhances reliability during high-power operation.
📩 Contact Us
What is the typical gate threshold voltage range?
The gate threshold voltage varies between 1.0 V and 3.0 V, indicating the voltage at which the device begins to conduct. This range allows for compatibility with standard gate drive voltages in various electronic systems.
In which applications is this MOSFET most commonly used?
It is widely applied in automotive power switches, industrial motor controllers, power management modules, and DC-DC converters, where its electrical characteristics deliver efficiency and reliability under demanding conditions.
