NT2H1311G0DUFZ 1Kb I2C EEPROM Memory IC – 8-Pin SOIC Package

  • This device provides secure, contactless memory storage ideal for data retention in embedded systems.
  • NT2H1311G0DUFZ features a memory capacity suitable for storing configuration settings and small data payloads efficiently.
  • The compact package reduces board space, enabling integration into designs with strict size constraints.
  • It supports quick data access in consumer electronics, enhancing user experience through fast configuration retrieval.
  • Manufactured with quality controls to ensure consistent performance and data integrity across operating conditions.
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产品上方询盘

NT2H1311G0DUFZ Overview

The NT2H1311G0DUFZ is a high-performance NFC Forum Type 2 Tag IC designed for seamless near-field communication applications. It features a compact 3×3 mm package with embedded 1 kbit EEPROM memory, providing robust read/write capabilities with fast data access. This device supports energy harvesting functions, enabling power supply to external circuits through RF energy, making it ideal for contactless identification and sensor data transmission. Its integrated 13.56 MHz interface ensures compatibility with a wide range of NFC-enabled devices, offering a reliable and secure communication channel. Sourcing professionals and engineers benefit from its low power consumption and flexible memory organization, streamlining integration into industrial and consumer applications. For more details, visit IC Manufacturer.

NT2H1311G0DUFZ Technical Specifications

Parameter Specification
Memory Size 1 kbit EEPROM
Communication Frequency 13.56 MHz (NFC)
Interface Type NFC Forum Type 2 Tag
Operating Voltage 2.7 V to 3.6 V
Package DFN 3×3 mm (10-pin)
Data Retention ??10 years
Write Endurance ??100,000 cycles
Energy Harvesting Supported (up to 5 mA output)
Operating Temperature Range -25??C to +85??C

NT2H1311G0DUFZ Key Features

  • Integrated 1 kbit EEPROM Memory: Enables efficient storage for NFC data and user information, facilitating fast read/write operations for responsive tag performance.
  • Energy Harvesting Capability: Supplies power to external circuits using RF energy, reducing the need for an additional power source and enhancing system integration flexibility.
  • Compact 3×3 mm DFN Package: Minimizes PCB footprint, ideal for space-constrained industrial and consumer devices while maintaining robust electrical and mechanical characteristics.
  • NFC Forum Type 2 Tag Compliance: Ensures broad compatibility with NFC-enabled smartphones and readers, supporting reliable contactless communication.
  • Low Power Consumption: Optimized for battery-powered applications, extending device operational life and reducing overall system energy demands.
  • High Write Endurance and Long Data Retention: Guarantees durability and data integrity, suitable for applications requiring frequent updates and long-term reliability.
  • Wide Operating Temperature Range: Supports deployment in diverse environmental conditions, from industrial to consumer electronics.

NT2H1311G0DUFZ Advantages vs Typical Alternatives

This NFC tag IC offers superior integration through its energy harvesting feature, enabling external circuit powering without additional batteries. Its compact packaging and long data retention outperform many standard NFC solutions, while the robust write endurance ensures reliability in demanding applications. The low power design and broad compatibility with NFC Forum standards make it a preferred choice over typical alternatives for engineers seeking efficiency, durability, and ease of integration.

Typical Applications

  • Contactless Identification Systems: Used in access control and asset tracking where secure and rapid NFC communication is essential, benefiting from energy harvesting to power auxiliary components.
  • Smart Posters and Marketing: Enables interactive NFC tags embedded in promotional materials, allowing quick information retrieval via smartphones.
  • Consumer Electronics Pairing: Facilitates device pairing and configuration in headphones, speakers, and wearable products through NFC communication.
  • Industrial Automation: Supports sensor data transmission and equipment monitoring by providing reliable NFC interface and power harvesting in industrial environments.

NT2H1311G0DUFZ Brand Info

The NT2H1311G0DUFZ is part of a leading NFC IC portfolio renowned for reliable performance and innovative features. This product is engineered to meet stringent industrial requirements while maintaining compatibility with consumer NFC devices. The brand emphasizes quality manufacturing processes, rigorous testing, and continuous support, ensuring that this NFC tag IC delivers consistent performance in diverse applications. Its adoption by global OEMs highlights its trusted reputation for seamless integration and advanced functionality.

FAQ

What is the memory capacity and structure of this NFC tag IC?

This device offers 1 kbit of EEPROM memory organized as 16 pages of 4 bytes each. The memory is divided into a read-only area reserved for the NFC Forum data and a user memory area for application-specific data storage, allowing flexible use cases.

How does the energy harvesting feature work and what is its output capability?

Energy harvesting allows the IC to convert the RF field from an NFC reader into a DC voltage to power external circuits. This device can supply up to approximately 5 mA of current at a voltage suitable for low-power peripherals, reducing the need for separate power sources.

What communication standards and compatibility does this device support?

The IC is compliant with NFC Forum Type 2 Tag specifications and supports ISO/IEC 14443 Type A communication at 13.56 MHz. It is fully interoperable with NFC-enabled smartphones and readers that comply with these standards, ensuring broad compatibility.

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产品中间询盘

What are the package dimensions and how suitable is it for compact designs?

The IC comes in a 3×3 mm dual flat no-lead (DFN) package with 10 pins, making it highly suitable for applications requiring minimal PCB space without compromising electrical performance or mechanical reliability.

What is the operating temperature range and durability of the memory?

The device operates reliably over a temperature range from -25??C to +85??C, suitable for most industrial and consumer environments. The EEPROM memory guarantees data retention for at least 10 years and write endurance of over 100,000 cycles, ensuring long-term durability.

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