NCJ29D5DHN/00201Y Overview
The NCJ29D5DHN/00201Y is a high-performance semiconductor device designed for robust and reliable electronic applications. Engineered to meet demanding industrial standards, it offers precise operational characteristics, making it suitable for integration into complex circuits. This component ensures stable functionality under varied electrical conditions and supports efficient system design through its optimized specifications. Sourcing specialists and engineers will find it valuable for enhancing overall device performance and reliability. For further details on sourcing and technical support, visit IC Manufacturer.
NCJ29D5DHN/00201Y Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | High-speed transistor |
| Collector-Emitter Voltage (VCEO) | 45 V |
| Collector Current (IC) | 500 mA |
| Power Dissipation (Ptot) | 400 mW |
| Transition Frequency (fT) | 1.5 GHz |
| Gain Bandwidth Product | 1.5 GHz |
| Package Type | SOT-23 |
| Operating Temperature Range | -55??C to +150??C |
NCJ29D5DHN/00201Y Key Features
- High transition frequency: Enables fast switching speeds, improving overall circuit responsiveness and performance in RF and high-speed digital applications.
- Compact SOT-23 package: Supports space-saving PCB layouts and allows easy integration into dense electronic assemblies.
- Wide operating temperature range: Ensures reliable operation in harsh industrial environments, enhancing system durability and uptime.
- Low power dissipation: Minimizes thermal stress and power consumption, contributing to energy-efficient designs and longer component lifespan.
NCJ29D5DHN/00201Y Advantages vs Typical Alternatives
This device offers superior switching speed and gain bandwidth compared to typical transistors in its class, providing enhanced accuracy and sensitivity in signal amplification. Its compact packaging and wide temperature tolerance make it more versatile and reliable for industrial and commercial applications. The low power dissipation further differentiates it by enabling efficient thermal management, which is crucial for maintaining long-term operational stability.
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Typical Applications
- High-frequency amplification circuits requiring fast switching and stable gain, such as RF front-end modules and low-noise amplifiers in communication devices.
- Signal processing in industrial control systems, where reliability under varying temperatures is critical.
- Compact power management solutions in portable and embedded electronics, benefiting from the low power dissipation and small footprint.
- General-purpose switching and amplification in consumer electronics and instrumentation equipment.
NCJ29D5DHN/00201Y Brand Info
This transistor is manufactured by a leading semiconductor producer known for delivering high-quality, reliable components tailored for industrial and commercial use. The product is engineered with precision technology to meet stringent performance and durability standards. Its consistent manufacturing quality ensures dependable operation, making it a trusted choice across multiple sectors including communications, automotive, and industrial electronics.
FAQ
What is the maximum collector-emitter voltage for this device?
The maximum collector-emitter voltage is rated at 45 volts, which allows it to handle moderate voltage levels suitable for a range of amplification and switching applications in industrial and commercial circuits.
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Can this transistor operate in high-temperature environments?
Yes, it is designed to operate reliably within a temperature range from -55??C up to +150??C, making it suitable for harsh environments where temperature variations are significant.
What package type is used for this transistor, and how does it affect integration?
The device comes in a SOT-23 package, known for its small size and surface-mount compatibility. This package facilitates compact PCB layouts and easy automated assembly, which is beneficial for space-constrained designs.
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How does the transition frequency impact its application?
A transition frequency of 1.5 GHz means the transistor can operate effectively at high frequencies, making it suitable for RF amplification and other high-speed signal processing tasks where fast switching is essential.
Is this transistor suitable for low-power applications?
Yes, with a power dissipation rating of 400 mW, it is well-suited for low-power applications where thermal management and energy efficiency are important considerations.





