NBP9FD4ST1 Overview
The NBP9FD4ST1 is a high-performance 90 V N-channel MOSFET designed specifically for industrial and automotive power switching applications. It features low on-resistance and fast switching capabilities, making it ideal for efficient power management and energy-saving circuits. With a robust voltage rating and thermal performance, this device ensures reliability under demanding operating conditions. Its compact package supports high-density layouts, enabling engineers to optimize space without compromising performance. For sourcing and design professionals seeking a reliable, high-efficiency transistor, the NBP9FD4ST1 delivers consistent quality and performance. More details can be found at IC Manufacturer.
NBP9FD4ST1 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 90 | V |
| Continuous Drain Current (ID) @ 25??C | 5.5 | A |
| On-Resistance (RDS(on)) @ VGS = 10 V | 15.5 | m?? |
| Gate Threshold Voltage (VGS(th)) | 1.0 to 2.5 | V |
| Total Gate Charge (Qg) | 18 | nC |
| Power Dissipation (PD) | 1.25 | W |
| Operating Junction Temperature (TJ) | -55 to +150 | ??C |
| Package Type | SO-8 | ?C |
NBP9FD4ST1 Key Features
- Low On-Resistance: With an RDS(on) of just 15.5 m?? at 10 V gate drive, it minimizes conduction losses, enhancing overall circuit efficiency.
- High Voltage Handling: Rated at 90 V drain-source voltage, it supports robust power applications and ensures reliable operation in demanding environments.
- Fast Switching Performance: The device??s quick switching characteristics reduce switching losses, significantly improving power conversion efficiency in high-frequency circuits.
- Compact SO-8 Package: Its small footprint supports high-density PCB designs, facilitating miniaturization without thermal compromise.
NBP9FD4ST1 Advantages vs Typical Alternatives
This transistor offers a balanced combination of low on-resistance and high voltage capability, enabling better efficiency and thermal performance compared to typical MOSFETs in the same class. Its fast switching speeds reduce power losses in switching regulators, while the compact SO-8 package allows for easier integration into space-constrained designs. These factors collectively provide enhanced reliability and power savings in industrial and automotive applications.
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Typical Applications
- DC-DC converters for automotive and industrial power supplies, where efficient switching and thermal reliability are critical for extended operation.
- Load switching in battery management systems, providing precise control with minimal power dissipation.
- Motor control circuits requiring robust voltage handling and low conduction losses for improved performance.
- General purpose high-speed switching applications in industrial electronics where compact size and efficiency are priorities.
NBP9FD4ST1 Brand Info
The NBP9FD4ST1 is part of a trusted semiconductor portfolio known for delivering reliable power MOSFET solutions. Manufactured with advanced silicon technology, this device reflects a commitment to quality and performance demanded by professional engineers and sourcing specialists. Its design caters to rigorous industrial and automotive standards, ensuring consistent operation over a wide temperature range and challenging electrical conditions.
FAQ
What is the maximum drain-source voltage rating of this MOSFET?
The device is rated for a maximum drain-source voltage of 90 V, making it suitable for applications requiring medium voltage handling capabilities common in automotive and industrial power systems.
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How does the on-resistance affect the device??s efficiency?
Lower on-resistance reduces conduction losses when the MOSFET is conducting current, which directly improves overall efficiency in power conversion and switching circuits. This device??s RDS(on) of 15.5 m?? at 10 V gate drive ensures minimal power dissipation during operation.
What package type is the transistor available in?
The component is housed in a SO-8 package, offering a compact footprint that supports high-density PCB designs and effective thermal management suitable for industrial environments.
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Can this MOSFET operate at high temperatures?
Yes, it supports an operating junction temperature range from -55??C up to +150??C, allowing it to function reliably in harsh thermal environments commonly found in automotive and industrial applications.
What are the switching characteristics of this transistor?
The device features fast switching capabilities with a total gate charge of 18 nC, which helps reduce switching losses and enhance the efficiency of high-frequency power conversion circuits.
