MX84B016SF1 Overview
The MX84B016SF1 is a high-performance static random-access memory (SRAM) device designed for industrial and embedded applications requiring reliable, fast, and low-power memory solutions. Featuring a 16Mbit density organized in 1M x 16-bit configuration, this memory component supports wide voltage operation and fast access times, ensuring optimized system efficiency and responsiveness. Ideal for buffering and cache memory uses, the MX84B016SF1 balances power consumption with robust data retention, making it suitable for complex electronics requiring stable and predictable performance. For detailed technical data and sourcing, visit IC Manufacturer.
MX84B016SF1 Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Density | 16 Mbit (1M x 16-bit) |
| Access Time | 10 ns (nanoseconds) |
| Operating Voltage | 2.7 V to 3.6 V |
| Data Retention Voltage | 1.5 V (minimum) |
| Input/Output Configuration | 16-bit data bus |
| Package Type | Standard 44-pin TSOP II |
| Operating Temperature Range | -40??C to +85??C |
| Power Consumption (Standby) | Typically 20 ??A |
| Power Consumption (Operating) | Approximately 120 mA |
MX84B016SF1 Key Features
- High-Speed Access: With a 10 ns access time, it enables rapid data retrieval critical for high-performance computing and real-time processing applications.
- Wide Voltage Operating Range: Supports 2.7 V to 3.6 V operation, providing flexibility in diverse power environments and enhancing compatibility with various system designs.
- Low Power Standby Mode: Consumes minimal current (~20 ??A) in standby, extending battery life in portable and low-power embedded systems.
- Robust Temperature Range: Operates reliably between -40??C and +85??C, ensuring stability in harsh industrial and automotive environments.
- 16-bit Data Interface: Facilitates efficient parallel data transfer, improving throughput in data-intensive applications.
- Compact TSOP II Package: Provides high-density mounting with simplified PCB layout, aiding integration in space-constrained designs.
- Data Retention Capability: Maintains stored data at low voltage (1.5 V), supporting non-volatile like behavior during power interruptions.
MX84B016SF1 Advantages vs Typical Alternatives
This SRAM device offers superior speed and low power consumption compared to typical asynchronous SRAMs, making it ideal for applications demanding fast and efficient memory access. Its wide operating voltage and extended temperature range provide enhanced reliability and flexibility over standard memory solutions. The 16-bit interface and compact TSOP II package improve integration ease and system performance, distinguishing it from conventional memory products.
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Typical Applications
- Buffer and cache memory in industrial controllers and embedded systems, where fast and reliable data access is critical for system responsiveness and operational continuity.
- Data storage in telecommunications equipment requiring low power consumption and quick access times for signal processing.
- Automotive electronic control units (ECUs) operating under wide temperature ranges and demanding robust memory solutions.
- High-speed networking devices where temporary data storage and rapid retrieval are essential for throughput optimization.
MX84B016SF1 Brand Info
The MX84B016SF1 is a product line from a trusted semiconductor manufacturer specializing in memory devices for industrial and embedded applications. Known for high quality and reliability, this SRAM offers engineers a balanced solution of speed, power efficiency, and environmental tolerance. The brand’s commitment to rigorous testing and industry-standard compliance ensures consistent performance suited to critical system designs.
FAQ
What is the operating voltage range of this memory device?
The operating voltage for this SRAM ranges from 2.7 V to 3.
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