MX80B04PZ1B Overview
The MX80B04PZ1B is a high-performance semiconductor device designed for industrial and automotive applications requiring robust power management and precise control. Featuring advanced integration and optimized electrical characteristics, it delivers reliable operation across a broad temperature range, ensuring system stability under harsh conditions. This device supports efficient energy conversion with minimal losses, making it ideal for engineers focused on improving power efficiency and thermal performance. The MX80B04PZ1B is manufactured by IC Manufacturer, leveraging cutting-edge fabrication technology to meet stringent industry standards.
MX80B04PZ1B Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Power MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 80 A |
| RDS(on) (Max) @ VGS=10V | 1.9 m?? |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| Total Gate Charge (Qg) | 40 nC |
| Operating Junction Temperature (TJ) | -55??C to +175??C |
| Package Type | PowerPAK? SO-8 |
| Thermal Resistance, Junction-to-Case (R??JC) | 1.0 ??C/W |
MX80B04PZ1B Key Features
- Low RDS(on) Resistance: Minimizes conduction losses, improving overall efficiency for power-sensitive applications.
- High Current Capability: Supports continuous drain currents up to 80 A, enabling robust performance in demanding load conditions.
- Wide Operating Temperature Range: Maintains reliable operation from -55??C to +175??C, suitable for harsh industrial environments.
- Compact PowerPAK? SO-8 Package: Provides excellent thermal dissipation and space-saving integration on PCBs.
- Fast Switching Performance: Enables efficient power conversion with reduced switching losses in high-frequency circuits.
MX80B04PZ1B Advantages vs Typical Alternatives
This device offers superior conduction efficiency through its low RDS(on) and high current handling, reducing power loss compared to typical MOSFETs. Its wide temperature tolerance and robust packaging enhance system reliability in industrial and automotive settings. The optimized gate charge ensures faster switching speeds, improving energy efficiency and thermal management versus conventional alternatives.
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Typical Applications
- Power management circuits in automotive systems, where high current and thermal stability are crucial for safety and performance.
- Industrial motor control applications requiring efficient switching and high load capacity.
- DC-DC converters where low conduction losses and fast switching optimize energy conversion efficiency.
- Battery protection and power distribution modules in renewable energy systems, benefiting from rugged operational characteristics.
MX80B04PZ1B Brand Info
Produced by IC Manufacturer, the MX80B04PZ1B exemplifies the company??s commitment to delivering high-quality semiconductor devices for demanding industrial and automotive markets. The brand??s focus on innovation and reliability ensures that this power MOSFET meets rigorous performance and durability standards, supporting engineers and designers in creating efficient, robust electronic systems.
FAQ
What is the maximum operating voltage of this device?
The maximum drain-source voltage (VDS) for this device is rated at 40 volts, making it suitable for a variety of medium-voltage power management applications.
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How does the low RDS(on) benefit system efficiency?
Low RDS