MX2N4856UB-JFET-NChannel N-Channel JFET Transistor in TO-92 Package by Mitsubishi

  • This JFET device provides stable amplification for analog signal processing, enhancing circuit precision and performance.
  • Its N-Channel configuration supports efficient current control, crucial for low-noise and high-impedance applications.
  • The compact package design ensures board-space savings, facilitating integration into dense electronic assemblies.
  • Ideal for sensor interfacing where sensitive input stages require minimal signal distortion and interference.
  • Manufactured with quality control measures to ensure consistent electrical characteristics and long-term reliability.
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MX2N4856UB-JFET-NChannel Overview

The MX2N4856UB is an N-Channel Junction Field Effect Transistor (JFET) designed for high-performance analog switching and amplification applications. With its robust electrical characteristics, low noise, and stable operation over a wide temperature range, this device provides precision and reliability in signal control circuits. It is optimized for low gate leakage and consistent transconductance, making it ideal for sensitive electronic instrumentation and industrial systems. Sourced from a leading IC Manufacturer, the transistor supports efficient power management and seamless integration in complex analog designs.

MX2N4856UB-JFET-NChannel Technical Specifications

ParameterSpecification
TypeN-Channel JFET
Drain-Source Voltage (VDS)25 V
Gate-Source Voltage (VGS)??25 V
Drain Current (ID)Up to 20 mA
Power Dissipation (PD)350 mW
Gate Leakage Current (IGSS)Max ??100 pA
Pinch-Off Voltage (VP)-0.9 V to -3.0 V
Input Capacitance (Ciss)2.5 pF (typical)
Operating Temperature Range-55??C to +150??C

MX2N4856UB-JFET-NChannel Key Features

  • Low Gate Leakage: Ensures minimal current loss and high input impedance, critical for precision analog circuits.
  • Wide Voltage Range: Supports up to 25 V drain-source voltage, enabling versatile applications in various industrial environments.
  • High Power Dissipation: Rated for 350 mW, allowing reliable operation under moderate power conditions without thermal degradation.
  • Stable Transconductance: Provides consistent gain characteristics for accurate signal amplification and switching.
  • Compact Package: Facilitates easy integration into space-constrained analog and sensor interface designs.

Typical Applications

  • Low-noise preamplifiers in sensor signal conditioning, where precise input impedance and low leakage current improve measurement accuracy.
  • Analog switches in industrial control systems, providing reliable signal routing with minimal distortion.
  • Voltage-controlled resistors for audio and instrumentation circuits, enabling smooth and stable analog modulation.
  • Buffer stages in communication equipment, ensuring signal integrity with low distortion and high linearity.

MX2N4856UB-JFET-NChannel Advantages vs Typical Alternatives

This device offers superior performance in terms of gate leakage and transconductance stability compared to typical MOSFET and bipolar transistor alternatives. Its low noise and wide voltage range make it highly suitable for precision analog applications requiring high input impedance and reliable switching. The robust power dissipation rating enhances longevity and thermal performance, providing engineers with a dependable solution for sensitive industrial electronics.

MX2N4856UB-JFET-NChannel Brand Info

Manufactured by a globally recognized semiconductor producer, the MX2N4856UB JFET transistor is part of a trusted product line known for quality and consistency. The brand specializes in high-reliability discrete components optimized for industrial and instrumentation markets. Each device undergoes rigorous testing to meet stringent performance and reliability standards, making it a preferred choice for engineers requiring precise analog control and stable operation under demanding conditions.

FAQ

What is the maximum operating voltage for this N-Channel JFET?

The maximum drain-source voltage (VDS) for this transistor is 25 V, allowing it to operate safely within most low to medium voltage analog circuits without risk of breakdown.

How does the low gate leakage current benefit

Application

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