MVR2N2907AUA/TR NPN Transistor by MVR – High Gain, TO-220 Package

  • This transistor enables efficient switching and amplification, improving circuit responsiveness and control.
  • It features a voltage rating suitable for handling moderate power loads, ensuring safe operation in varied conditions.
  • The compact package design supports board-space savings, facilitating integration in densely populated electronics.
  • Ideal for use in power management circuits, it helps maintain stable current flow and device protection.
  • Manufactured to meet industry standards, it offers consistent performance and long-term operational reliability.
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MVR2N2907AUA/TR Overview

The MVR2N2907AUA/TR is a high-performance PNP bipolar junction transistor designed for general-purpose amplification and switching applications. Engineered to deliver reliable operation under a wide range of conditions, this transistor supports moderate current and voltage ratings, making it suitable for industrial control circuits and signal processing. Its complementary characteristics and robust package ensure ease of integration into electronic designs requiring dependable linear and switching performance. For sourcing specialists and engineers prioritizing consistent quality and efficiency, this device represents a practical solution available through IC Manufacturer.

MVR2N2907AUA/TR Key Features

  • PNP transistor structure: Enables effective amplification and switching in both analog and digital circuits, enhancing design versatility.
  • Moderate collector current rating: Supports up to 600 mA, accommodating typical industrial control and driver applications with sufficient power handling.
  • Collector-emitter voltage: Rated for 60 V, ensuring stability and reliability in mid-voltage range circuits common in industrial environments.
  • Complementary to common NPN transistors: Facilitates balanced push-pull amplifier stages and other symmetrical applications.

MVR2N2907AUA/TR Technical Specifications

Parameter Specification
Transistor Type PNP Bipolar Junction Transistor
Collector-Emitter Voltage (Vceo) 60 V
Collector-Base Voltage (Vcbo) 60 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 600 mA
Power Dissipation (Pc) 625 mW
DC Current Gain (hFE) 100 ?C 300 (varies by test conditions)
Transition Frequency (fT) 100 MHz (typical)
Package Type SOT-23 Surface Mount

MVR2N2907AUA/TR Advantages vs Typical Alternatives

This transistor offers a balanced combination of moderate voltage and current ratings with a compact surface-mount package, making it advantageous over bulkier or lower-performance devices. Its reliable gain and switching characteristics provide consistent linearity and efficiency in industrial applications. The availability in a standard SOT-23 package supports automated assembly and high-density PCB layouts, enhancing overall integration and manufacturing efficiency compared to through-hole or less optimized alternatives.

Typical Applications

  • General-purpose amplification and switching in industrial control circuits, where reliable moderate current handling and stable switching are essential for efficient operation.
  • Signal processing stages in analog circuits requiring precise gain control with low noise and high frequency response.
  • Complementary push-pull amplifier configurations to improve power efficiency and reduce distortion in audio and driver applications.
  • Power management and interface circuits in embedded systems needing compact, surface-mount transistor solutions.

MVR2N2907AUA/TR Brand Info

The MVR2N2907AUA/TR is manufactured by a globally recognized semiconductor producer known for high-quality discrete components. This product line emphasizes robust electrical characteristics and reliability, catering to industrial and commercial applications. The transistor is part of a broader portfolio that supports modern surface-mount technology and adheres to stringent quality and performance standards, ensuring dependable operation across diverse electronic designs.

FAQ

What are the maximum voltage ratings for the MVR2N2907AUA/TR?

The transistor supports a maximum collector-emitter voltage of 60 V, collector-base voltage of 60 V, and emitter-base voltage of 5 V. These ratings define the maximum voltages the device can safely withstand without breakdown.

Can this transistor handle high current loads?

It can handle collector currents up to 600 mA, which is adequate for many general-purpose switching and amplification tasks in industrial and consumer applications. For higher current needs, other transistor types may be required.

What is the typical gain of this transistor?

The DC current gain (hFE) typically ranges between 100 and 300, depending on operating conditions. This gain range makes it suitable for amplifying low to moderate level signals reliably.

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产品中间询盘

Is this device suitable for surface-mount PCB assembly?

Yes, the transistor is packaged in a SOT-23 surface-mount package, which supports automated pick-and-place assembly and is ideal for high-density circuit board layouts.

What are common applications for this PNP transistor?

Common uses include general-purpose amplification, switching in control circuits, signal processing, push-pull amplifier stages, and power management in embedded systems, reflecting its versatility in industrial electronics.

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