MV2N4860-JFET-NChannel N-Channel JFET Transistor ?C TO-92 Package | On Semiconductor

  • This JFET transistor controls current flow precisely, improving signal amplification and switching performance.
  • Its low noise characteristic enhances circuit sensitivity, crucial for accurate analog signal processing.
  • The compact package design allows efficient board space usage in dense electronic assemblies.
  • Ideal for sensor interface circuits where stable, low-leakage performance ensures reliable data acquisition.
  • Manufactured under strict quality standards to ensure consistent electrical characteristics and long-term reliability.
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MV2N4860-JFET-NChannel Overview

The MV2N4860-JFET-NChannel is a high-performance N-channel junction field-effect transistor (JFET) designed for precision analog switching and amplification applications. Featuring low noise and stable electrical characteristics, this device offers reliable operation in low-current and high-impedance circuits. Optimized for industrial and instrumentation uses, it supports efficient signal control with minimal distortion. Its robust construction ensures consistent performance over a wide temperature range, making it suitable for sensitive measurement and switching tasks. Engineers and sourcing specialists benefit from its proven semiconductor reliability and straightforward integration into diverse electronic systems. For more detailed product insights, visit IC Manufacturer.

MV2N4860-JFET-NChannel Technical Specifications

ParameterSpecificationUnit
TypeN-Channel JFET?C
Drain-Source Voltage (VDS)60V
Gate-Source Cutoff Voltage (VGS(off))-0.5 to -5.0V
Drain Current (ID)10mA
Gate Reverse Current (IGSS)1nA
Input Capacitance (Ciss)4pF
Power Dissipation (PD)310mW
Operating Temperature Range-55 to +150??C

MV2N4860-JFET-NChannel Key Features

  • Low Gate Leakage Current: Ensures minimal signal loss and high input impedance, critical for precision analog circuits.
  • Wide Drain-Source Voltage Rating: Supports voltage handling up to 60 V, allowing use in moderate power switching scenarios.
  • Stable Cutoff Voltage Range: Provides predictable switching characteristics for consistent circuit behavior.
  • Low Input Capacitance: Enhances high-frequency response and reduces signal distortion in sensitive applications.
  • High Power Dissipation Capability: Enables operation in thermally demanding environments without compromising reliability.

Typical Applications

  • Precision analog switches and amplifiers where low noise and stable characteristics are essential for signal integrity.
  • Sensor interface circuits requiring high input impedance to prevent loading effects during measurement.
  • Low-level signal processing in instrumentation systems that demand minimal distortion and leakage currents.
  • Switching circuits in industrial control equipment benefiting from robust voltage and temperature handling.

MV2N4860-JFET-NChannel Advantages vs Typical Alternatives

This transistor offers superior low gate leakage current and low input capacitance compared to typical alternatives, resulting in enhanced signal fidelity and minimal distortion. Its wide voltage rating and robust power dissipation support reliable operation in industrial and instrumentation settings. These attributes provide engineers with a dependable, high-precision switching component that excels in sensitive analog and measurement circuits.

MV2N4860-JFET-NChannel Brand Info

The MV2N4860-JFET-NChannel is manufactured by Microsemi Corporation, a leading global supplier of semiconductor solutions for industrial, aerospace, and instrumentation applications. Known for high-quality, reliable discrete components, Microsemi??s JFET transistors deliver consistent performance in demanding environments. Their robust design and stringent quality standards make this device a preferred choice for engineers seeking dependable analog switch and low-noise amplification solutions.

FAQ

What is the maximum drain current rating of the MV2N4860-JFET-NChannel?

The device supports a maximum continuous drain current of 10 mA, suitable for low-power switching and amplification applications where precise control of small

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