MSR2N3637UB-Transistor NPN Power Amplifier Transistor in TO-220 Package by Microsemi

  • This transistor controls current flow effectively, enabling precise switching and amplification in circuits.
  • Its specified voltage rating ensures stable operation under various electrical conditions, enhancing circuit safety.
  • The compact package type reduces board space, making it suitable for designs with limited layout area.
  • Ideal for use in power management modules, it helps maintain efficient energy distribution in electronic devices.
  • Manufactured to meet industry standards, the component offers consistent performance and long-term reliability.
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MSR2N3637UB-Transistor Overview

The MSR2N3637UB transistor is a high-performance NPN bipolar junction transistor designed for medium-power amplification and switching applications. Engineered to deliver reliable operation under varying electrical conditions, this device supports efficient current gain and voltage handling. It is optimized for use in industrial electronics and control circuits, providing stable performance and robustness. The transistor??s compact package and standardized pin configuration facilitate easy integration in complex systems. Available through IC Manufacturer, it meets stringent quality standards suitable for engineers and sourcing specialists aiming for durable and precise transistor solutions.

MSR2N3637UB-Transistor Technical Specifications

ParameterValueUnit
Transistor TypeNPN Bipolar Junction?C
Collector-Emitter Voltage (VCEO)60V
Collector Current (IC)3A
Power Dissipation (Ptot)30W
DC Current Gain (hFE)40 ?C 160?C
Transition Frequency (fT)30MHz
Junction Temperature (TJ)150??C
Package TypeTO-220?C
Collector-Base Voltage (VCBO)80V

MSR2N3637UB-Transistor Key Features

  • High collector current capability: Supports up to 3A, enabling effective handling of medium power loads in industrial circuits.
  • Robust voltage ratings: Collector-emitter voltage of 60V and collector-base voltage of 80V ensure reliability in switching and amplification tasks.
  • Wide DC current gain range: Offers gain between 40 and 160, allowing flexible design choices for amplification stages.
  • Thermal stability: Maximum junction temperature of 150??C supports high-temperature operation and enhances device reliability.
  • Compact TO-220 package: Facilitates efficient heat dissipation and straightforward mounting in power electronics assemblies.
  • Good frequency response: Transition frequency of 30 MHz suits medium-frequency switching and amplification applications.
  • Durable construction: Designed to withstand industrial environmental stresses, ensuring long operational life.

Typical Applications

  • Power amplification in audio and signal processing circuits, where medium power handling and gain stability are required for consistent output quality.
  • Switching in power supplies and voltage regulators, enabling efficient control of high-current loads with minimal losses.
  • Motor control circuits, where the transistor??s current capacity and voltage ratings support reliable operation in industrial automation.
  • General purpose amplification and switching in industrial control systems, offering robustness and ease of integration in harsh environments.

MSR2N3637UB-Transistor Advantages vs Typical Alternatives

This transistor provides a balanced combination of high collector current, robust voltage tolerance, and thermal endurance compared to many alternatives. Its broad current gain range allows engineers to optimize circuit performance for accuracy and efficiency. The TO-220 package supports superior heat dissipation, enhancing reliability and lifespan. Overall, it stands out in power-switching and amplification tasks where durability and consistent electrical characteristics are critical.

MSR2N3637UB-Transistor Brand Info

The MSR2N3637UB transistor is manufactured by a reputable semiconductor supplier specializing in discrete components for industrial electronics applications. This product reflects the brand??s commitment to quality, offering reliable performance suited for demanding

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