MSR2N3637-Transistor NPN Power Transistor in TO-220 Package ?C High Current Switch

MSR2N3637-Transistor Overview

The MSR2N3637 is a high-performance NPN bipolar junction transistor (BJT) designed for medium-power switching and amplification applications. Engineered to provide reliable operation under varying electrical loads, it supports collector currents up to 15A and collector-emitter voltages up to 60V. This transistor offers robust gain characteristics and low saturation voltage, making it suitable for industrial control circuits, motor drivers, and power amplification stages. Its TO-220 package ensures efficient heat dissipation and ease of integration into existing designs. For sourcing and detailed specifications, visit the IC Manufacturer.

MSR2N3637-Transistor Technical Specifications

MSR2N3637-Transistor Key Features

• High Collector Current Capability: Supports continuous collector currents up to 15A, enabling heavy-duty switching and amplification tasks in industrial circuits.
• Robust Voltage Handling: Rated for 60V collector-emitter voltage, suitable for medium voltage applications without compromising device integrity.
• Low Saturation Voltage: Minimizes power losses during conduction, improving overall circuit efficiency and thermal management.
• Wide Operating Temperature Range: Ensures reliable performance across industrial temperature ranges, supporting applications in harsh environments.

Typical Applications

• Power switching in industrial motor control circuits, where high current and voltage ratings are essential for driving inductive loads safely and efficiently.
• Audio amplifier output stages requiring medium power transistors with stable gain and low distortion characteristics.
• Relay driver circuits that demand reliable switching performance and robust handling of inductive kickback voltages.
• General-purpose amplification and switching in consumer electronics and automotive control systems where durable and efficient transistors are necessary.

MSR2N3637-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of high current capacity and voltage rating, outperforming many standard BJTs in power handling. Its low saturation voltage reduces conduction losses, which enhances energy efficiency and thermal performance in demanding industrial environments. Compared to typical alternatives, it provides better reliability in medium-power switching applications while maintaining stable gain characteristics, making it a preferred choice for engineers seeking robust and efficient transistor solutions.

MSR2N3637-Transistor Brand Info

The MSR2N3637 transistor is manufactured by MSR Semiconductor, a reputed supplier specializing in power discrete components. MSR Semiconductor focuses on delivering reliable and cost-effective semiconductor devices designed for industrial and consumer electronics markets. The MSR2N3637 is part of their portfolio targeting medium-power transistor applications, known for quality manufacturing standards, consistent performance, and broad availability. Their products support a wide range of applications, ensuring engineers access dependable components backed by technical support and comprehensive datasheets.

FAQ

What is the maximum collector current rating for this transistor?

The transistor can handle a continuous collector current of up to 15 amperes, making it suitable for medium-power switching and amplification tasks where high current flow is required.

Can this transistor operate at high temperatures?

Yes, it supports an operating junction temperature range from -55??C to +150??C, allowing it to function reliably in harsh environmental conditions typical of industrial applications.

What package type is the MSR2N3637 transistor available in?

This device is housed in a TO-220 package, which facilitates efficient heat dissipation and easy mounting on heat sinks, beneficial for power management in circuits.