MSR2N3501-Transistor NPN Power Transistor in TO-220 Package by MSR2N

  • This transistor amplifies electrical signals efficiently, enabling improved circuit performance and control.
  • It supports a voltage rating suitable for handling moderate power loads, ensuring stable operation under stress.
  • The compact package design reduces PCB space, facilitating integration into densely packed electronic assemblies.
  • Ideal for switching applications in power management circuits, it enhances energy efficiency in various devices.
  • Manufactured to meet industry standards, it offers consistent reliability and long-term operational stability.
Microchip Technology-logo
产品上方询盘

MSR2N3501-Transistor Overview

The MSR2N3501-Transistor is a robust NPN bipolar junction transistor designed for medium power switching and amplification tasks in industrial electronics. Featuring a high collector current rating and voltage tolerance, this transistor offers reliable performance in demanding applications. Its sturdy construction ensures stable operation under thermal stress, making it suitable for use in power regulation, signal amplification, and driver circuits. Engineers and sourcing specialists seeking an efficient, cost-effective component for medium-power stages will find this transistor meets stringent electrical standards without compromising durability. For more detailed sourcing and technical information, visit IC Manufacturer.

MSR2N3501-Transistor Key Features

  • High Collector Current Capacity: Supports collector currents up to 4A, enabling effective handling of medium-power loads without degradation.
  • Collector-Emitter Voltage: Withstands up to 60V, providing flexibility in voltage range for various power supply designs.
  • Fast Switching Speed: Suitable for switching applications, improving circuit response times and reducing power losses.
  • Thermal Stability: Designed to maintain performance under elevated temperatures, enhancing reliability in harsh industrial environments.

MSR2N3501-Transistor Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCE) 60 V
Collector Current (IC) 4 A
Power Dissipation (Ptot) 30 W
Transition Frequency (fT) 100 MHz
Gain Bandwidth Product 100 MHz
Collector-Base Voltage (VCB) 100 V
Emitter-Base Voltage (VEB) 5 V
DC Current Gain (hFE) 40 to 320

MSR2N3501-Transistor Advantages vs Typical Alternatives

This transistor delivers higher collector current and voltage ratings compared to many typical medium-power transistors, providing enhanced robustness and reliability. Its fast switching capability improves circuit efficiency, while thermal stability reduces the risk of failure in industrial environments. These factors make it a superior choice for engineers requiring durable performance and consistent operation in demanding switching and amplification roles.

Typical Applications

  • Power Amplification: Ideal for medium-power amplifier stages in audio and signal processing equipment due to its high current and voltage handling capabilities.
  • Switching Circuits: Enables efficient switching in power supply regulators and motor control circuits where rapid response and durability are essential.
  • Driver Circuits: Suitable for driving relays, solenoids, or other inductive loads requiring reliable current control.
  • Industrial Control Systems: Used in automation and control modules that demand stable transistor operation under varied electrical loads.

MSR2N3501-Transistor Brand Info

The MSR2N3501-Transistor represents a trusted solution in the semiconductor market, engineered to meet industrial standards for durability and performance. Manufactured with precise process controls, this device offers consistent quality and long-term reliability. Its design reflects a balance between cost and performance, making it a preferred choice for OEMs and electronics manufacturers focused on medium-power transistor applications.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current rating of this transistor is 4 amperes, allowing it to handle medium-power loads effectively in various switching and amplification circuits without damage or performance loss.

Can this transistor operate in high-frequency applications?

Yes, with a transition frequency of approximately 100 MHz, this transistor supports moderate high-frequency applications, making it suitable for signal amplification and switching tasks that require fast response times.

What voltage levels can this transistor withstand between collector and emitter?

This device can tolerate a collector-emitter voltage of up to 60 volts, enabling it to function reliably in circuits powered by moderate voltage supplies common in industrial and consumer electronics.

📩 Contact Us

产品中间询盘

Is the transistor suitable for use in environments with elevated temperatures?

Yes, the transistor is built with thermal stability in mind, allowing it to maintain consistent performance under increased thermal stress typical in industrial and power electronics applications.

What types of applications benefit most from using this transistor?

This transistor is ideal for medium-power amplification, switching circuits, driver stages, and industrial control systems where stable current handling, voltage tolerance, and switching speed are critical for overall circuit performance.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?