MSR2N2369AUB/TR Overview
The MSR2N2369AUB/TR is a high-performance NPN bipolar junction transistor designed for medium power amplification and switching applications. Featuring a robust voltage rating and significant current handling capability, it offers reliable operation in industrial and consumer electronics environments. This transistor delivers consistent gain and switching speed, making it suitable for signal amplification and general-purpose switching tasks. Its compact SOT-23 surface-mount package supports efficient PCB integration and thermal management. Engineers and sourcing specialists can rely on this device for dependable performance in demanding applications. For detailed sourcing and support, visit IC Manufacturer.
MSR2N2369AUB/TR Key Features
- High Collector-Emitter Voltage (VCEO): Allows operation in circuits requiring up to 40V, enabling versatility in power management and signal amplification.
- Collector Current (IC) Capability: Supports up to 0.8A continuous collector current, suitable for moderate load driving and switching applications.
- Compact SOT-23 Surface-Mount Package: Facilitates space-saving PCB layouts and enhances thermal dissipation for improved reliability.
- Low Saturation Voltage: Ensures efficient switching with minimal power loss, optimizing overall circuit efficiency.
MSR2N2369AUB/TR Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector-Base Voltage (VCBO) | 60 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current Continuous (IC) | 0.8 A |
| Power Dissipation (Ptot) | 350 mW |
| DC Current Gain (hFE) | 100 (Min, at IC=10mA) |
| Transition Frequency (fT) | 100 MHz |
| Package Type | SOT-23 Surface Mount |
MSR2N2369AUB/TR Advantages vs Typical Alternatives
This transistor stands out due to its balanced combination of voltage rating and current handling in a compact SOT-23 package, offering engineers enhanced integration flexibility and reliable performance. Compared to typical alternatives, it provides lower saturation voltage and sufficient gain, improving switching efficiency and signal amplification accuracy in diverse industrial applications.
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Typical Applications
- General-purpose amplification circuits requiring moderate voltage and current handling, such as audio amplifiers and signal boosters in industrial control systems.
- Switching applications including relay drivers and low-power motor control where efficient switching and thermal resilience are critical.
- Voltage regulation and level shifting circuits in power management modules for consumer and industrial electronics.
- Interface circuits for microcontrollers and digital logic devices needing reliable transistor switching in compact form factors.
MSR2N2369AUB/TR Brand Info
The MSR2N2369AUB/TR is a product within the semiconductor portfolio of IC Manufacturer, representing a trusted choice for engineers seeking reliable NPN transistors. This device is engineered to meet rigorous industrial standards and supports diverse applications with consistent quality and performance. Its availability in tape-and-reel packaging ensures efficient automated assembly and inventory management for high-volume production environments.
FAQ
What is the maximum collector current rating for this transistor?
The device supports a continuous collector current of up to 0.8 amperes, enabling it to handle moderate loads in switching and amplification applications without compromising reliability.
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What package type is the MSR2N2369AUB/TR offered in?
It comes in a compact SOT-23 surface-mount package, which is ideal for space-constrained PCB layouts and facilitates automated assembly processes.
How does the transistor perform in switching applications?
With a low saturation voltage and a transition frequency of 100 MHz, this transistor offers efficient switching characteristics suitable for relay drivers, level shifters, and other switching circuits requiring fast response times.
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What voltage ratings are important for this transistor?
The collector-emitter voltage rating is 40V, while the collector-base voltage is rated at 60V, ensuring the device can operate safely within these limits in various power and signal applications.
Is this transistor suitable for high-frequency amplification?
Yes, with a transition frequency of 100 MHz, it is capable of handling moderate high-frequency signals, making it suitable for audio and RF amplification within its power and gain specifications.
