MSR2N2369AUA/TR MOSFET Transistor by MSR | N-Channel, TO-220 Package

  • This device functions as a high-speed transistor, enabling efficient signal amplification in electronic circuits.
  • It features a low noise figure, improving signal clarity and performance in sensitive communication applications.
  • The compact package design helps save valuable board space, facilitating denser and more versatile layouts.
  • Ideal for use in RF front-end modules where maintaining signal integrity is critical for device operation.
  • Manufactured under stringent quality controls to ensure consistent reliability and long-term operational stability.
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MSR2N2369AUA/TR Overview

The MSR2N2369AUA/TR is a high-performance NPN bipolar junction transistor designed for switching and amplification applications. Featuring a robust current gain and fast switching speeds, this transistor is optimized for industrial and consumer electronics where reliable signal amplification and power management are critical. Its compact package and consistent electrical characteristics make it ideal for integration into complex circuits requiring efficient load driving and signal control. Sourced directly from a trusted IC Manufacturer, it delivers dependable performance in a wide range of operating conditions.

MSR2N2369AUA/TR Key Features

  • High current gain: Ensures efficient amplification, reducing the need for additional amplification stages.
  • Fast switching speed: Enables effective operation in high-frequency circuits, improving signal integrity.
  • Wide voltage range: Supports various power supply voltages, enhancing design flexibility for diverse applications.
  • Compact SOT-23 package: Facilitates space-saving PCB layouts important for modern electronic designs.

MSR2N2369AUA/TR Technical Specifications

Parameter Value Unit
Transistor Type NPN
Collector-Emitter Voltage (VCEO) 40 V
Collector Current (IC) 0.6 A
Gain Bandwidth Product (fT) 100 MHz
DC Current Gain (hFE) 100 – 300
Base-Emitter Voltage (VBE) 0.7 V
Power Dissipation (Ptot) 350 mW
Package Type SOT-23

MSR2N2369AUA/TR Advantages vs Typical Alternatives

This transistor offers a superior balance of current gain and switching speed compared to typical alternatives, enabling more efficient amplification and faster response times. Its low power dissipation and compact SOT-23 package improve thermal management and space efficiency. These advantages make it a reliable choice for engineers seeking optimized performance in signal processing and load driving applications.

Typical Applications

  • General purpose amplification in low to medium power circuits where reliable gain and fast switching are required, such as audio and signal processing equipment.
  • Switching applications in power management systems, facilitating efficient control of loads and relays.
  • Driver transistor in motor control circuits for industrial automation, enhancing response and stability.
  • Interface stages in communication devices, supporting signal amplification with minimal distortion.

MSR2N2369AUA/TR Brand Info

The MSR2N2369AUA/TR is a product from a reputable semiconductor manufacturer known for delivering quality discrete components tailored for industrial and consumer electronics markets. This transistor embodies the brand’s commitment to consistent electrical performance, reliability, and compact design. It is widely used by engineers globally for applications demanding robust switching and amplification within compact footprints.

FAQ

What type of transistor is the MSR2N2369AUA/TR?

The device is an NPN bipolar junction transistor (BJT) designed primarily for switching and amplification purposes. Its structure allows for efficient control of current flow in electronic circuits.

What is the maximum collector current the transistor can handle?

This transistor supports a maximum collector current of 0.6 amperes, making it suitable for low to medium power applications where moderate current levels are required.

In what package is the transistor supplied?

The MSR2N2369AUA/TR is supplied in a compact SOT-23 package, which is ideal for space-constrained PCB designs and supports automated assembly processes.

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What is the typical voltage rating for this transistor?

The maximum collector-emitter voltage is rated at 40 volts, ensuring safe operation within a wide range of power supply voltages common in industrial and consumer electronics.

How does this transistor perform in high-frequency applications?

With a gain bandwidth product of approximately 100 MHz, this transistor is well-suited for high-frequency switching and amplification tasks, providing fast response and minimal signal loss.

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