MSPM0L1304TDGS20R Power Management IC, TDGS20R Package

MSPM0L1304TDGS20R Overview

The MSPM0L1304TDGS20R is a high-performance power MOSFET optimized for compact power conversion and switching applications. It combines low on-resistance with fast switching to deliver higher efficiency across a wide operating range. The device comes in a thermally efficient package that supports tighter board layouts and improved thermal management. Designers can leverage its low gate charge to reduce switching losses and drive requirements. For procurement and design resources, see IC Manufacturer.

MSPM0L1304TDGS20R Technical Specifications

MSPM0L1304TDGS20R Key Features

• Low RDS(on) for reduced conduction losses and higher current capability in the same footprint.
• Moderate VDS rating that suits many automotive and industrial 12 V and 24 V systems while enabling safer margin compared to lower-voltage MOSFETs.
• Low total gate charge to lower switching losses and reduce gate driver sizing and power consumption.
• Thermally efficient package that improves heat transfer to the PCB and supports higher power dissipation in compact designs.

Typical Applications

• Primary MOSFET in synchronous buck regulators for point-of-load converters in server and telecom equipment, improving conversion efficiency and thermal performance over higher-RDS(on) parts.
• High-current load switches and power distribution switches in battery management systems where lower conduction losses and compact packaging reduce PCB area and heat sink requirements.
• Motor-drive half-bridge stages in small to medium electric motors for industrial automation where fast switching and low gate charge improve overall system efficiency and control fidelity.
• Automotive power electronics for DC?DC converters and auxiliary power modules where a balance of VDS margin, low RDS(on), and thermal robustness is required for reliable operation.

MSPM0L1304TDGS20R Advantages vs Typical Alternatives

The MSPM0L1304TDGS20R reduces conduction and switching losses compared to many general-purpose MOSFETs by offering a low RDS(on) and a modest Qg. Its thermally optimized package improves junction-to-board heat transfer versus standard packages, letting designers run higher continuous currents without larger heatsinks. For space-constrained systems, the part packs higher current handling and lower losses into a smaller board area when compared to older MOSFETs with higher resistance or larger thermal footprints.

MSPM0L1304TDGS20R Brand Info

The MSPM0L1304TDGS20R is associated with a semiconductor supplier focused on power management and discretes. The brand emphasizes robust thermal design, consistent manufacturing quality, and broad distribution for industrial and automotive markets. Product support typically includes datasheets, application notes, and distribution through franchised electronics suppliers.

FAQ

What is the maximum VDS rating?

The device is rated for a maximum drain-to-source voltage of 40 V. This rating makes it suitable for many common 12 V and 24 V systems while providing headroom for transients in automotive and industrial environments.

How much continuous current can it handle?

Continuous drain current is specified at 120 A at 25 ??C under standard test conditions. Actual current capability depends on PCB thermal layout, ambient temperature, and cooling strategy.

What is the typical RDS(on) value?

Typical on-resistance is 1.30 milliohms at VGS = 10 V. Lower RDS(on) improves conduction efficiency and reduces I2R losses compared with higher-resistance alternatives.

Which package should I plan for?

It ships in a TDGS20R thermal-enhanced surface-mount package. The package is designed for improved board-level thermal dissipation and compact PCB integration.

What are key thermal design considerations?

Designers should optimize PCB copper area, use thermal vias, and consider a heatsink or airflow to reach the quoted power dissipation. R??JA is board dependent and must be estimated for your layout.