MSPM0L1106TRHBR Microcontroller MCU, Tape & Reel

MSPM0L1106TRHBR Overview

The MSPM0L1106TRHBR is a surface-mount power MOSFET optimized for high-efficiency switching in compact industrial designs. With a focus on low conduction losses and fast switching, it targets power conversion, motor drive pre?stages, and high-current load switches where board space and thermal performance matter. The device comes in a tape-and-reel format suited for automated assembly and higher-volume production. For supplier and ordering details, see IC Manufacturer.

MSPM0L1106TRHBR Technical Specifications

MSPM0L1106TRHBR Key Features

• Low RDS(on) provides reduced conduction losses for higher efficiency in power stages and DC?CDC converters.
• 60 V rating allows use in higher-voltage rails compared with many 30 V MOSFETs, increasing application flexibility.
• Moderate gate charge (11 nC) balances switching speed and driving energy, lowering gate?drive requirements for lower system losses.
• Tape?and?reel packaging supports automated pick-and-place for large-scale assembly and consistent handling during production.

Typical Applications

• Synchronous rectification and secondary-side switching in isolated DC?CDC converters where lower conduction loss and compact SMD packages improve board-level efficiency and density.
• Pre?driver and half?bridge stages in motor control systems that require a higher VDS margin than typical low?voltage MOSFETs provide.
• Load switches and hot?swap controllers in server and telecom systems where controlled turn?on and reduced thermal dissipation enable higher reliability under continuous load.
• Battery management and power distribution modules in industrial equipment where 60 V capability and low RDS(on) reduce stress on downstream components and improve run-time efficiency.

MSPM0L1106TRHBR Advantages vs Typical Alternatives

The part’s combination of a 60 V rating and a low typical RDS(on) of 11 m?? delivers lower conduction loss compared to many 30 V or higher?RDS(on) competitors, improving overall converter efficiency. With a moderate gate charge, it trades lower drive energy for competitive switching speed, which can simplify gate?driver design. Tape?and?reel packaging supports higher-volume assembly, making it a practical choice for production compared with individually packaged alternatives.

MSPM0L1106TRHBR Brand Info

The MSPM0L1106TRHBR is offered by a semiconductor supplier focused on power management and discrete MOSFET solutions for industrial markets. The brand emphasizes reliable SMD power devices, consistent manufacturing traceability, and packaging options such as tape?and?reel to support automated assembly and supply?chain scalability.

FAQ

What is the maximum VDS rating?

The device is rated for 60 V drain?to?source. That higher voltage rating allows designers to use it across more demanding rails compared with many lower?voltage MOSFET options.

How low is the RDS(on)?

Typical RDS(on) is 11 m?? at a 10 V gate drive. This low on?resistance reduces conduction losses in high?current paths and supports improved thermal performance in dense PCB layouts.

Is the part suitable for automated assembly?

Yes. The TRHBR suffix denotes tape?and?reel packaging, which is compatible with automated pick?and?place machines and supports production volumes with reels commonly holding 3,000 units.

What gate drive does it require?

The device features a moderate total gate charge around 11 nC, so typical gate drivers with standard drive strength can switch it efficiently while keeping gate energy and losses reasonable.

What is the recommended operating temperature?

Rated operating junction temperature ranges from ?55 ??C to +150 ??C, allowing the device to handle a broad set of industrial thermal environments when appropriate thermal management is applied.