MSP430FR2353TDBT Overview
The MSP430FR2353TDBT is a low?power, 16?bit microcontroller with non?volatile FRAM memory and integrated peripherals for compact sensor and metering designs. It targets battery?powered and energy?sensitive industrial applications where frequent writes, fast wake?up, and sustained endurance matter. The device combines a simple instruction set with small package options and wide supply compatibility to reduce board area and system complexity. For procurement and further product resources, see IC Manufacturer.
MSP430FR2353TDBT Technical Specifications
| Parameter | Value |
|---|---|
| CPU architecture | 16?bit RISC |
| Non?volatile memory | FRAM, 16 KB |
| RAM | 512 B |
| Maximum CPU clock | 16 MHz |
| Operating voltage | 1.8 V to 3.6 V |
| I/O count | 16 GPIOs |
| Package | 20?pin TSSOP (TDBT) |
| Operating temperature | -40 ??C to +85 ??C |
| Low?power standby current | ?? 0.4 ??A (typical low?power mode) |
| Serial interfaces | eUSCI modules for UART/SPI/I2C |
MSP430FR2353TDBT Key Features
- 16?bit RISC core with compact instruction set for efficient code density and predictable performance.
- FRAM non?volatile memory enabling fast write cycles and high endurance for frequent data logging.
- Wide 1.8?C3.6 V supply range for flexible integration in battery and single?supply systems.
- Multiple serial interfaces (UART/SPI/I2C) via eUSCI to simplify sensor and display connectivity.
- Small 20?pin TSSOP package to minimize PCB footprint in space?constrained designs.
Typical Applications
- Battery?powered sensor nodes requiring frequent non?volatile logging, long service life, and minimal idle current consumption for extended field operation.
- Portable medical monitors that need fast wake?up, frequent data writes to FRAM, and low power draw to preserve battery life between measurements.
- Industrial metering and utility endpoints where high write endurance and reliable non?volatile storage reduce maintenance and support long data retention.
- Human?machine interfaces and compact control panels that benefit from integrated serial peripherals and small package size to lower BOM and board area.
MSP430FR2353TDBT Advantages vs Typical Alternatives
The FRAM?based MCU offers faster write speeds and far greater write endurance than comparable flash?based microcontrollers, which reduces system latency for frequent data logging. Its ultra?low standby current and wide operating voltage make it more suitable for battery?operated designs than many higher?power 8/32?bit alternatives. The small 20?pin package and integrated eUSCI serial blocks also lower BOM count and board area versus devices that require external EEPROM or larger packages.
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MSP430FR2353TDBT Brand Info
The MSP430FR2353TDBT is part of the MSP430 family from Texas Instruments, a long?standing semiconductor vendor known for low?power microcontrollers and analog integration. TI positions this line for embedded designs that prioritize energy efficiency, robust non?volatile memory, and wide ecosystem support for development tools and reference designs.
FAQ
What memory type does it use?
It uses FRAM (ferroelectric RAM) as non?volatile program and data storage. FRAM delivers faster writes and far higher endurance compared with traditional flash memory, which is beneficial for frequent write scenarios.
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What is the supply voltage range?
The device operates across a wide single?supply range of 1.8 V to 3.6 V, enabling compatibility with common battery chemistries and single?rail systems while maintaining reliable digital I/O levels.
Which package suits tight layouts?
The TDBT suffix denotes the 20?pin TSSOP package option, which offers a compact footprint and low profile to minimize PCB area in small industrial or portable products.
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Can it interface with common sensors?
Yes. Integrated eUSCI serial modules support UART, SPI, and I2C protocols, making it straightforward to connect accelerometers, temperature sensors, displays, and other peripherals without extra bridging ICs.
Is it suitable for low?power designs?
Yes. The MCU targets ultra?low?power applications with microamp?level standby current and quick wake?up behavior, helping extend battery life in sensor nodes and portable instruments.



