MS2N5662-Transistor NPN Amplifier Transistor in TO-92 Package by [Brand]

  • This transistor amplifies electrical signals, enabling efficient switching and control in electronic circuits.
  • Featuring a compact package, it reduces board space and supports high-density circuit designs.
  • Its electrical characteristics ensure stable performance under varying load conditions for consistent operation.
  • Ideal for signal amplification in communication devices, improving signal clarity and system responsiveness.
  • Manufactured to meet industry standards, it offers dependable reliability for long-term electronic applications.
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产品上方询盘

MS2N5662-Transistor Overview

The MS2N5662 is a high-performance NPN bipolar junction transistor designed for switching and amplification in medium power applications. Offering reliable operation with a maximum collector current of 1.5A and a collector-emitter voltage rating up to 80V, this transistor ensures robust performance in industrial circuits. Its complementary balance of gain and voltage handling makes it suitable for drivers, amplifiers, and general-purpose switching tasks. Manufactured under strict quality controls, the MS2N5662 is an essential component for engineers seeking dependable solutions in power management and signal processing. For more product details, visit IC Manufacturer.

MS2N5662-Transistor Key Features

  • High Collector Current Capability: Supports up to 1.5A, enabling efficient switching in power circuits without thermal overload.
  • Collector-Emitter Voltage Rating: Rated for 80V, providing reliable operation in medium voltage environments.
  • Gain Characteristics: Offers a DC current gain (hFE) between 40 and 320, allowing versatility in amplification and switching applications.
  • Fast Switching Speed: Ensures minimal delay in switching operations, improving overall circuit efficiency.

MS2N5662-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 80 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1.5 A
Power Dissipation (Ptot) 1 W
DC Current Gain (hFE) 40 to 320 ??
Transition Frequency (fT) 100 MHz
Operating Junction Temperature (Tj) 150 ??C

MS2N5662-Transistor Advantages vs Typical Alternatives

This transistor provides a strong balance of voltage handling and current capacity, outperforming many general-purpose transistors in medium power applications. Its wide gain range and fast switching frequency contribute to enhanced circuit responsiveness and efficiency. Compared to typical alternatives, it offers improved reliability under thermal stress and better integration in switching and amplification tasks, making it a preferred choice for engineers focused on durability and consistent performance.

Typical Applications

  • Power amplifiers in audio and signal processing circuits requiring stable gain and current capacity for medium power levels.
  • Switching components in industrial control systems demanding rapid response and voltage endurance.
  • Driver stages for relays, motors, and solenoids where reliable current handling is essential.
  • General-purpose amplification and switching in consumer electronics and instrumentation devices.

MS2N5662-Transistor Brand Info

The MS2N5662 transistor is produced by a reputable semiconductor manufacturer known for delivering high-quality discrete components optimized for industrial and commercial electronics. This transistor is part of a well-established product line offering reliable performance and consistent parameters to meet demanding engineering requirements. The brand emphasizes stringent testing and quality assurance processes, ensuring that each unit performs to specification under varied operational conditions.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current for this transistor is 1.5 amperes, which makes it suitable for medium power applications such as switching and amplification where moderate current handling is required.

Can this transistor operate in high voltage circuits?

Yes, the device supports a collector-emitter voltage of up to 80 volts, making it capable of reliable operation in circuits requiring medium voltage endurance without breakdown.

What is the typical gain range of this transistor?

The DC current gain (hFE) ranges from 40 to 320, allowing flexibility in both low and high gain applications, depending on the circuit design and operating conditions.

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产品中间询盘

How does the power dissipation rating affect its use?

The transistor has a total power dissipation rating of 1 watt, which means it can handle moderate power levels but requires proper thermal management to avoid overheating in continuous operation.

Is this transistor suitable for high-frequency applications?

With a transition frequency (fT) of approximately 100 MHz, this transistor can be used in moderately high-frequency circuits, making it suitable for switching and amplification tasks in various signal processing applications.

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