MRFX1K80NR5 Overview
The MRFX1K80NR5 is a high-performance semiconductor device designed for industrial electronics and power management applications. Engineered to deliver efficient power switching with robust thermal and electrical characteristics, it supports reliable operation in demanding environments. This component integrates advanced functionalities for optimized performance, ensuring enhanced durability and consistent efficiency. Its design caters to engineers and sourcing specialists seeking a dependable solution for power conversion and control tasks. For further technical resources and supply options, visit IC Manufacturer.
MRFX1K80NR5 Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Power MOSFET |
| Drain-Source Voltage (VDS) | 800 V |
| Continuous Drain Current (ID) | 10 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| On-Resistance (RDS(on)) | 1.2 ?? @ VGS = 10 V |
| Power Dissipation (PD) | 50 W |
| Operating Junction Temperature (TJ) | -55 ??C to +175 ??C |
| Package Type | TO-220 |
| Total Gate Charge (Qg) | 45 nC |
MRFX1K80NR5 Key Features
- High Voltage Blocking Capability: Supports up to 800 V, enabling safe operation in high-voltage power conversion applications.
- Low On-Resistance: With a maximum RDS(on) of 1.2 ??, it reduces conduction losses, improving overall system efficiency.
- Robust Thermal Handling: Designed for operation up to 175 ??C, enhancing reliability in harsh industrial environments.
- Fast Switching Performance: The device??s low total gate charge enables rapid switching speeds, minimizing power loss during transitions.
MRFX1K80NR5 Advantages vs Typical Alternatives
This power MOSFET offers superior voltage rating and thermal endurance compared to typical alternatives, ensuring enhanced reliability in demanding industrial applications. Its low on-resistance and efficient switching characteristics provide improved power handling with reduced energy losses. These advantages make it a preferred choice for engineers seeking a balance of performance and durability in power management solutions.
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Typical Applications
- Industrial power supplies: Ideal for switching regulators and DC-DC converters requiring high voltage tolerance and efficient power control.
- Motor control circuits: Suitable for driving industrial motors with precise switching and thermal stability.
- Renewable energy systems: Applicable in solar inverters and energy storage systems where robustness and efficiency are critical.
- Uninterruptible Power Supplies (UPS): Provides reliable switching performance under varying load conditions to ensure continuous power delivery.
MRFX1K80NR5 Brand Info
This device is developed by a leading IC manufacturer specializing in power semiconductor solutions for industrial and automotive markets. The MRFX1K80NR5 is part of a product line known for combining high voltage capability with reliable thermal performance. The brand emphasizes quality, rigorous testing, and application support to meet stringent industry standards, making this transistor a trusted component in power electronic designs worldwide.
FAQ
What is the maximum voltage rating of this power MOSFET?
The device supports a maximum drain-source voltage of 800 V, making it suitable for high-voltage power conversion applications where robust voltage blocking is essential.
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How does the on-resistance affect device performance?
Lower on-resistance reduces conduction losses during operation, which enhances overall efficiency and lowers heat generation. At 1.2 ??, this model is optimized for minimizing power dissipation in switching circuits.
What operating temperature range does this component support?
It is designed for operation across a wide temperature range from -55 ??C to +175 ??C, enabling reliable function in extreme industrial environments without degradation.
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What package type is used for this transistor?
The transistor is housed in a TO-220 package, which offers good thermal conductivity and easy mounting options for effective heat dissipation in power electronics.
Is this device suitable for fast switching applications?
Yes, the device features a low total gate charge of 45 nC, which facilitates rapid switching speeds, reducing switching losses and improving efficiency in dynamic power control scenarios.
