MRFE8VP8600HSR5 Overview
The MRFE8VP8600HSR5 is a high-performance LDMOS RF power transistor designed for demanding industrial applications requiring efficient power amplification at UHF frequencies. Offering robust output power capability, this device excels in broadband linear amplification, making it ideal for use in communication infrastructure and broadcasting equipment. Engineered to deliver reliable operation with excellent thermal management, the transistor supports enhanced system efficiency and reduced downtime. With a compact package suited for automated assembly, it meets the rigorous requirements of modern RF power amplifier designs. For more detailed product information, visit IC Manufacturer.
MRFE8VP8600HSR5 Technical Specifications
| Parameter | Specification |
|---|---|
| Operating Frequency Range | 470 MHz to 860 MHz |
| Output Power (P3dB) | 500 W (typical) |
| Gain | 15.5 dB (typical at 860 MHz) |
| Drain Efficiency | 55% (typical at 860 MHz) |
| Supply Voltage (Vds) | 28 V (typical) |
| Input/Output Impedance | 50 ?? |
| Package Type | HSR5 (Hermetic Surface Mount) |
| Thermal Resistance, Junction to Case | 0.25 ??C/W (max) |
| Maximum Operating Temperature | 200 ??C (junction) |
MRFE8VP8600HSR5 Key Features
- Broadband UHF Performance: Covers 470 to 860 MHz frequency range, providing versatility in various RF applications requiring wide frequency agility.
- High Output Power: Capable of delivering up to 500 W, enabling efficient signal amplification for medium-power transmitter systems.
- Superior Thermal Management: Low thermal resistance and robust package design promote reliable operation under continuous high-power conditions.
- High Gain and Efficiency: Typical gain of 15.5 dB and 55% drain efficiency improve overall system performance and reduce power consumption.
- Hermetic Surface Mount Packaging: The HSR5 package ensures long-term reliability in harsh industrial environments, simplifying automated PCB assembly.
- Optimized for Linear Amplification: Supports applications demanding high linearity, such as broadcast transmitters and two-way radio infrastructure.
- Low Input/Output Impedance: Industry-standard 50 ?? impedance ensures straightforward integration with other RF components and systems.
MRFE8VP8600HSR5 Advantages vs Typical Alternatives
This transistor offers superior broadband linear amplification with higher power output and improved efficiency compared to typical LDMOS devices in the UHF range. Its low thermal resistance and hermetic packaging enhance reliability, reducing failure rates in industrial environments. The device??s optimized gain and power handling minimize distortion and improve signal integrity, providing a competitive edge for critical RF power amplification tasks.
🔥 Best-Selling Products
Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- UHF Broadcast Transmitters: Provides robust power amplification for television and radio broadcast equipment operating within the 470?C860 MHz band, ensuring clear signal transmission over wide areas.
- Two-Way Radio Systems: Supports critical communication infrastructure requiring reliable, high-power RF amplification with excellent linearity for voice and data signals.
- Industrial RF Amplifiers: Suitable for various industrial RF power amplifier designs where efficient and reliable amplification is essential for process control and wireless communication.
- Test and Measurement Equipment: Enables precise, high-power RF signal generation for calibration and testing of RF components and systems within the specified frequency range.
MRFE8VP8600HSR5 Brand Info
The MRFE8VP8600HSR5 is a precision-engineered RF power transistor from a leading semiconductor manufacturer known for delivering high-reliability LDMOS devices. This product line is recognized for its robust performance in RF power amplification and is widely adopted in industrial, broadcast, and communication sectors. Designed with advanced semiconductor processes and tested to stringent quality standards, the transistor provides consistent power output and durability, supporting engineers and system integrators in developing high-efficiency RF amplifier solutions.
FAQ
What frequency range does this RF power transistor operate in?
The device operates effectively over a broadband UHF frequency range from 470 MHz up to 860 MHz. This wide frequency coverage makes it suitable for various communication and broadcasting applications requiring flexible frequency agility.
🌟 Featured Products
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
What is the typical output power capability of this transistor?
It typically delivers an output power of around 500 watts at the 3 dB compression point (P3dB), supporting medium-power RF amplification needs for industrial and broadcast transmitters.
How does the device manage thermal dissipation?
The transistor features a low thermal resistance junction-to-case value of approximately 0.25 ??C/W, which, combined with its hermetic surface-mount package, ensures effective heat dissipation and reliable operation under high power and continuous use conditions.
📩 Contact Us
What package type is used for this LDMOS transistor?
The component is housed in an HSR5 hermetic surface mount package, which provides environmental protection and mechanical stability, making it suitable for automated assembly and harsh operating environments.
Is this transistor optimized for linear amplification?
Yes, the device is specifically designed to offer high linearity and gain, making it suitable for applications requiring minimal signal distortion such as broadcast and two-way radio amplifiers where signal fidelity is critical.
