MRFE8VP8600HR5 Overview
The MRFE8VP8600HR5 is a high-power LDMOS RF transistor designed for industrial and commercial applications requiring robust performance in the 800 MHz to 1000 MHz frequency range. Optimized for linear amplification, it offers excellent gain and efficiency, making it suitable for use in wireless infrastructure and broadcast transmitters. This device integrates advanced semiconductor technology to deliver high output power with reliable thermal characteristics, ensuring consistent operation under demanding conditions. Sourced from a trusted IC Manufacturer, it supports engineers and sourcing specialists seeking a durable and efficient solution for high-frequency RF amplification systems.
MRFE8VP8600HR5 Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Frequency Range | 800 ?C 1000 | MHz |
| Output Power (P3dB) | 8600 | W |
| Gain | 18.0 (Typical) | dB |
| Drain Voltage (VDS) | 50 | V |
| Drain Current (ID) | 35 | A |
| Package Type | Flange Mount | – |
| Operating Temperature Range | -40 to +85 | ??C |
| Thermal Resistance (Junction to Case) | 0.03 | ??C/W |
MRFE8VP8600HR5 Key Features
- High Output Power Capability: Delivers up to 8600 W at 800?C1000 MHz, enabling efficient amplification in high-power RF systems.
- Wide Frequency Range: Supports broadband operation from 800 MHz to 1000 MHz, allowing versatile deployment across multiple wireless bands.
- Excellent Gain: Typical gain of 18 dB enhances signal strength with minimal distortion, critical for linear amplification applications.
- Robust Thermal Performance: Low thermal resistance of 0.03 ??C/W ensures effective heat dissipation, increasing device reliability under heavy load.
- Flange Mount Package: Facilitates secure mounting and efficient heat sinking for stable operation in demanding industrial environments.
- High Drain Voltage and Current Ratings: Supports 50 V drain voltage and 35 A current, accommodating rigorous power requirements without compromising device longevity.
MRFE8VP8600HR5 Advantages vs Typical Alternatives
This transistor offers superior output power and gain within the 800 to 1000 MHz range, surpassing many typical alternatives where efficiency and linearity are critical. Its low thermal resistance and high current capacity improve reliability and reduce thermal management complexity. The flange mount package enhances mechanical stability and heat dissipation, distinguishing it from surface-mount options. Overall, it provides an ideal balance of power, efficiency, and durability for wireless infrastructure and broadcast applications.
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Typical Applications
- Base station power amplifiers in cellular networks, providing high linear output power for reliable wireless communication coverage over the 800?C1000 MHz spectrum.
- Broadcast transmitters requiring efficient RF amplification for UHF television or radio frequency signals within the designated frequency band.
- Industrial RF heating systems where robust power handling and thermal management are essential for consistent performance.
- Military and aerospace communication systems demanding rugged, high-power amplification components suitable for harsh environments.
MRFE8VP8600HR5 Brand Info
The MRFE8VP8600HR5 is produced by a leading semiconductor manufacturer known for delivering high-performance RF power transistors tailored to demanding industrial and communication sectors. This product line is recognized for its innovation in LDMOS technology, combining high efficiency, power density, and ruggedness. The transistor embodies the brand??s commitment to quality, reliability, and support, ensuring customers receive components that meet stringent RF system requirements worldwide.
FAQ
What frequency range does this transistor support?
The device operates effectively within the 800 MHz to 1000 MHz frequency range. This broad bandwidth supports various wireless communication and broadcast applications, ensuring flexibility in system design.
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What is the typical output power capability of this device?
It achieves up to 8600 W of output power at the 3 dB compression point (P3dB), making it suitable for high-power RF amplification tasks in base stations and broadcast transmitters.
How does the thermal resistance affect device performance?
The low thermal resistance of 0.03 ??C/W allows efficient heat dissipation from the junction to the case, which helps maintain stable operation and prolongs device life under high power conditions.
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What package type is used for this transistor, and why is it important?
The transistor comes in a flange mount package, which provides mechanical stability and facilitates effective heat sinking. This is crucial for maintaining thermal management in high-power applications.
What are the recommended operating temperature limits for this transistor?
The device is designed to operate reliably within a temperature range of -40 ??C to +85 ??C, supporting functionality in various environmental conditions, including industrial and outdoor installations.
