MRFE6VP6600NR3 Overview
The MRFE6VP6600NR3 is a high-performance LDMOS RF power transistor designed for demanding industrial and commercial applications. It delivers robust output power with high efficiency and linearity, making it ideal for use in RF power amplifiers operating in the VHF and UHF frequency ranges. Built to withstand rigorous operating conditions, this device supports reliable and consistent performance in base station transmitters, radar systems, and communication infrastructure. For detailed technical data and sourcing, visit IC Manufacturer.
MRFE6VP6600NR3 Technical Specifications
| Parameter | Specification |
|---|---|
| Technology | LDMOS (Laterally Diffused Metal Oxide Semiconductor) |
| Frequency Range | 130 MHz to 175 MHz |
| Output Power (POUT) | 6600 W (typical) |
| Gain | 16 dB (typical) |
| Drain-Source Voltage (VDS) | 50 V (maximum) |
| Drain Current (ID) | 75 A (maximum) |
| Package Type | Flange Package with bolt-down mounting |
| Thermal Resistance (R??JC) | 0.05 ??C/W (junction to case) |
| Operating Temperature Range | -40 ??C to +150 ??C |
MRFE6VP6600NR3 Key Features
- High Output Power Capability: Supports up to 6600 W output power, enabling strong signal amplification in demanding RF environments.
- Wide Frequency Operation: Efficient performance from 130 MHz to 175 MHz, covering critical VHF/UHF bands for various industrial applications.
- Robust Thermal Management: Low thermal resistance ensures effective heat dissipation, enhancing device reliability under continuous high-power operation.
- Durable Package Design: Flange mounting facilitates secure installation and improved mechanical stability in high-vibration or harsh environments.
MRFE6VP6600NR3 Advantages vs Typical Alternatives
This device offers superior power output and thermal efficiency compared to typical RF transistors in similar frequency bands. Its robust LDMOS technology delivers excellent linearity and gain, minimizing distortion and improving signal fidelity. Enhanced thermal characteristics and durable packaging increase operational reliability, making it a preferred choice for high-demand RF amplification where consistent performance and longevity are critical.
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Typical Applications
- High-power RF amplifiers in broadcast transmitters operating in VHF and UHF frequency bands, requiring reliable and efficient amplification.
- Industrial and scientific RF equipment, including plasma generation and medical imaging systems.
- Radar transmitters where high output power and linearity are essential for accurate signal detection.
- Communication infrastructure such as base station power amplifiers for wireless networks.
MRFE6VP6600NR3 Brand Info
The MRFE6VP6600NR3 is produced by a leading semiconductor manufacturer specializing in RF power devices for industrial and communications applications. This LDMOS transistor represents the brand??s commitment to delivering high-performance, reliable components engineered for robust, high-power RF amplification. The product benefits from advanced fabrication techniques and stringent quality controls to ensure optimal operation in harsh and demanding environments.
FAQ
What frequency range does this RF transistor support?
The device operates efficiently within a frequency range of 130 MHz to 175 MHz, making it suitable for VHF and lower UHF band applications. This range covers many communication and broadcast frequency needs.
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What type of package does it use for mounting and installation?
It features a flange package designed for bolt-down mounting. This design provides excellent mechanical stability and efficient thermal conduction, which is essential for managing heat dissipation in high-power applications.
How does the device manage heat during high-power operation?
With a thermal resistance junction-to-case rating of approximately 0.05 ??C/W, the transistor efficiently transfers heat away from the junction, helping to maintain safe operating temperatures and enhancing long-term reliability.
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What is the maximum drain current rating for this transistor?
The maximum drain current is rated at 75 A, allowing it to handle significant current levels necessary for high output power amplification in demanding RF circuits.
For which applications is this transistor most suitable?
This transistor is ideal for high-power RF amplification in broadcast transmitters, radar systems, industrial RF equipment, and base station communications. Its power capacity and frequency range suit applications requiring reliable, high-efficiency signal amplification.
