MRFE6VP6300HSR5 Overview
The MRFE6VP6300HSR5 is a high-performance LDMOS RF power transistor designed for demanding industrial and communication applications. It offers robust output power capabilities with excellent linearity and efficiency at frequencies up to 250 MHz. This device supports high-voltage operation and delivers superior gain, making it suitable for base station transmitters and RF power amplifiers. Engineered for reliability and ease of integration, it ensures consistent performance under challenging operating conditions. For detailed specifications and purchasing, visit IC Manufacturer.
MRFE6VP6300HSR5 Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 30 to 250 MHz |
| Output Power (P3dB) | 6300 W (typical) |
| Supply Voltage (VDS) | 50 V (max) |
| Gain (typical) | 18 dB |
| Drain Efficiency | ?? 65% at P3dB |
| Input/Output Impedance | 50 ?? |
| Package Type | Flange-Mounted Package |
| Operating Temperature Range | -40 ??C to +85 ??C |
MRFE6VP6300HSR5 Key Features
- High Output Power Capacity: Delivers up to 6300 W at 250 MHz, enabling robust signal amplification for high-demand RF applications.
- Wide Frequency Range: Operates efficiently across 30 to 250 MHz, supporting diverse communication and broadcasting systems.
- Superior Efficiency: Achieves drain efficiencies of 65% or higher, which reduces power consumption and thermal stress, enhancing system reliability.
- High Gain Performance: Typical gain of 18 dB simplifies amplifier design by requiring fewer stages for desired output.
- Rugged Construction: Flange-mounted package ensures effective heat dissipation and mechanical stability under high-power operation.
- Standard 50 ?? Impedance: Ensures seamless integration into typical RF systems and networks without impedance matching complexity.
- Wide Operating Temperature Range: Supports industrial environments with reliable operation from -40 ??C to +85 ??C.
MRFE6VP6300HSR5 Advantages vs Typical Alternatives
This power transistor offers significant advantages compared to typical RF power devices, including higher output power and superior efficiency within its frequency band. Its robust voltage handling and flange-mounted package provide enhanced thermal management and mechanical reliability. The standard 50 ?? impedance and high gain reduce design complexity and improve overall system performance, making it a preferred choice for demanding industrial and communication applications.
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Typical Applications
- High-power RF transmitters for broadcasting and industrial systems, where reliable amplification and efficient power usage are critical to operational success.
- Base station power amplifiers requiring robust gain and linearity to maintain signal integrity over wide frequency ranges.
- Industrial RF heating and plasma generation systems that demand durable and efficient power transistors for continuous operation.
- Military and aerospace RF communication systems where performance consistency and ruggedness under harsh conditions are essential.
MRFE6VP6300HSR5 Brand Info
The MRFE6VP6300HSR5 is produced by a leading semiconductor manufacturer specializing in RF power devices designed for high-reliability industrial and communication markets. This product line focuses on delivering robust performance through advanced LDMOS technology, combining high output power, efficiency, and thermal management. The MRFE6VP6300HSR5 embodies the brand??s commitment to quality and innovation in RF power transistors, supporting demanding applications worldwide with proven durability and superior electrical characteristics.
FAQ
What frequency range does the MRFE6VP6300HSR5 support?
The device supports a frequency range from 30 MHz up to 250 MHz, making it suitable for various low to mid-band RF applications including broadcast and industrial RF systems.
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What is the maximum output power capability of this transistor?
It can deliver a typical output power of 6300 watts at its 3 dB compression point, providing strong amplification for high-power RF applications.
How efficient is the MRFE6VP6300HSR5 during operation?
The transistor achieves drain efficiencies of approximately 65% or greater at its rated output power, which helps reduce energy consumption and thermal load in amplifier designs.
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What type of package does this device use and why is it important?
This transistor is housed in a flange-mounted package that offers excellent heat dissipation and mechanical stability, which are critical for maintaining performance and reliability at high power levels.
What temperature range can this device reliably operate within?
The MRFE6VP6300HSR5 is specified to operate reliably across a temperature range from -40 ??C to +85 ??C, ensuring stable performance in a variety of industrial and outdoor environments.
