MRFE6VP6300HR5 Overview
The MRFE6VP6300HR5 is a high-power LDMOS transistor designed for RF power amplification in demanding industrial applications. Optimized for operation in the 50 V class, it delivers robust output power with superior efficiency and linearity, making it ideal for broadband and narrowband systems. Its rugged construction ensures reliability in harsh environments, supporting continuous wave and pulsed operation. Engineers and sourcing professionals will find this device well-suited for high-frequency power amplifier designs requiring consistent performance and thermal management. For more detailed product and support information, visit the IC Manufacturer website.
MRFE6VP6300HR5 Technical Specifications
| Parameter | Specification |
|---|---|
| Technology | LDMOS (Laterally Diffused Metal Oxide Semiconductor) |
| Operating Voltage | 50 V Typical |
| Frequency Range | Up to 600 MHz |
| Output Power (P3dB) | 6300 W (typical at 50 V) |
| Gain | Typical 14 dB |
| Efficiency | Up to 70% (Class AB operation) |
| Package Type | Flange Mount Package |
| Thermal Resistance (Junction-to-Case) | 0.1 ??C/W |
| Operating Temperature Range | -40 ??C to +85 ??C |
MRFE6VP6300HR5 Key Features
- High Output Power Capability: Supports up to 6300 W of RF output power at 50 V, enabling robust amplification for industrial and broadcast applications.
- Wide Frequency Range: Operates efficiently up to 600 MHz, providing versatility across various communication and radar systems.
- Excellent Thermal Performance: Low junction-to-case thermal resistance of 0.1 ??C/W aids in effective heat dissipation, enhancing reliability and longevity under continuous operation.
- High Gain: Typical gain of 14 dB reduces the need for multiple amplification stages, simplifying system design and lowering overall cost.
- Rugged Flange Mount Package: Ensures mechanical stability and easy integration into heat sink assemblies, supporting demanding environmental conditions.
- Class AB Operation Efficiency: Achieves up to 70% efficiency, balancing linearity and power consumption for improved system performance.
MRFE6VP6300HR5 Advantages vs Typical Alternatives
This device offers superior power density and efficiency compared to typical RF transistors in the 50 V class. Its robust thermal management and mechanical package deliver enhanced reliability in harsh operating environments. The wide frequency coverage and high gain minimize external component count, optimizing system integration. These advantages make it a preferred choice for applications where consistent output power, efficiency, and durability are critical.
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Typical Applications
- Industrial RF Power Amplifiers: Ideal for high-power amplification in broadcast transmitters, radar, and communication infrastructure, supporting both continuous wave and pulsed operation with reliability.
- Broadcast Transmitters: Provides high-efficiency amplification for VHF and lower UHF bands, ensuring clear signal transmission over wide areas.
- Military and Aerospace Systems: Suitable for rugged applications requiring stable high-power RF performance under variable environmental conditions.
- Scientific and Medical Equipment: Enables high-power RF generation in diagnostic and research instruments requiring precision and stability.
MRFE6VP6300HR5 Brand Info
This transistor is produced by a leading semiconductor manufacturer specializing in RF power solutions. The product line focuses on high-reliability LDMOS devices tailored for industrial and communication markets. Known for stringent quality control and comprehensive technical support, the brand ensures that this transistor meets demanding performance standards. The MRFE6VP6300HR5 reflects the company??s commitment to innovation and durability in RF power amplification technology.
FAQ
What is the typical operating voltage for this RF power transistor?
The typical operating voltage is 50 V, which balances high output power with device reliability. This voltage class is common for LDMOS RF transistors designed for industrial and broadcast amplification applications.
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What frequency range can this transistor effectively operate within?
The device operates efficiently up to 600 MHz. This makes it suitable for a variety of applications including VHF and lower UHF frequency bands, covering many communication and radar system requirements.
What kind of package does this transistor use, and why is it important?
It is housed in a flange mount package, which provides mechanical stability and excellent thermal conduction. This packaging facilitates effective heat dissipation, critical for maintaining performance and longevity in high-power RF applications.
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How does the thermal resistance affect the transistor??s performance?
The junction-to-case thermal resistance of 0.1 ??C/W allows efficient heat transfer from the semiconductor junction to the heat sink. Lower thermal resistance helps prevent overheating, enabling continuous operation at high power levels without degradation.
What efficiency can be expected in typical amplifier designs using this device?
When operated in Class AB mode, the transistor can achieve up to 70% efficiency. This level of efficiency is advantageous for reducing power consumption and managing thermal load in RF amplification systems.
