MRFE6VP6300GSR5 Overview
The MRFE6VP6300GSR5 is a high-power LDMOS RF transistor designed for robust industrial and communications applications. It delivers exceptional output power and efficiency at frequencies up to 512 MHz, making it ideal for broadband amplification. This device features a rugged construction and low distortion characteristics, providing reliable operation in demanding environments. Its advanced design supports high linearity and gain, ensuring superior signal integrity. Available through IC Manufacturer, this transistor is tailored for engineers seeking a dependable solution for high-performance RF amplification.
MRFE6VP6300GSR5 Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 250 MHz to 512 MHz |
| Output Power (P3dB) | 6300 W (typical) |
| Gain | 16.5 dB (typical) |
| Drain Efficiency | 65% (typical at 50 V, 512 MHz) |
| Supply Voltage (VDD) | 50 V (recommended) |
| Thermal Resistance (Junction to Case) | 0.05 ??C/W |
| Input Capacitance (Ciss) | 600 pF |
| Package Type | Flange Mount, Ceramic Package |
MRFE6VP6300GSR5 Key Features
- High Output Power Capability: Supports up to 6300 W output power, enabling efficient handling of demanding RF amplification tasks with minimal signal loss.
- Wide Frequency Range: Operates effectively from 250 MHz to 512 MHz, offering versatility across multiple broadband applications.
- Excellent Efficiency: Typical drain efficiency of 65% reduces power consumption and thermal stress, enhancing system reliability and lowering cooling requirements.
- Robust Thermal Management: Low thermal resistance design ensures efficient heat dissipation, improving device longevity under continuous high-power operation.
- High Gain and Linearity: Provides 16.5 dB gain with low distortion, maintaining signal integrity for critical communication systems.
- Rugged Ceramic Package: Durable flange mount package facilitates secure installation and superior mechanical stability in industrial environments.
MRFE6VP6300GSR5 Advantages vs Typical Alternatives
This transistor offers a compelling combination of high power output, broad frequency coverage, and excellent efficiency compared to typical RF power transistors. Its low thermal resistance and robust packaging improve reliability under heavy-duty conditions. The high gain and linearity enhance signal fidelity, making it a preferred choice for engineers looking for superior performance and durability in demanding RF amplifier designs.
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Typical Applications
- Broadband RF power amplification in industrial and commercial transmitter systems, providing reliable high-power amplification across VHF and UHF bands.
- Base station transmitters where robust performance and efficiency are critical for continuous operation.
- Military and defense RF systems requiring rugged, high-power transistor solutions.
- Broadcast transmitters supporting large coverage areas with consistent power output and low distortion.
MRFE6VP6300GSR5 Brand Info
The MRFE6VP6300GSR5 is part of a leading line of LDMOS RF transistors engineered by a top-tier semiconductor manufacturer specializing in high-performance industrial and communication components. This product embodies advanced semiconductor technology, combining rugged construction with superior RF characteristics. Designed to meet stringent industry requirements, it supports engineers and system designers in achieving efficient, reliable, and high-power RF amplification solutions.
FAQ
What is the typical frequency range supported by this RF power transistor?
The device operates effectively across a frequency range from 250 MHz up to 512 MHz. This broad coverage enables its use in various broadband RF and industrial applications requiring reliable performance across VHF and UHF bands.
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What output power can engineers expect from this transistor?
It typically delivers an output power of approximately 6300 watts at the 3 dB compression point, making it suitable for high-power RF amplification tasks in demanding environments.
How does the device manage thermal dissipation during operation?
The transistor features a low junction-to-case thermal resistance of 0.05 ??C/W, enabling efficient heat transfer to the heat sink or chassis. This thermal management capability supports continuous operation at high power levels without compromising reliability.
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What package type is used for this transistor, and why is it important?
It comes in a rugged ceramic flange mount package. This design provides mechanical stability, improved thermal conduction, and reliable mounting options, which are essential for high-power RF applications requiring robust assembly.
How does the efficiency of this device benefit system design?
With typical drain efficiency around 65%, the transistor reduces power losses and heat generation. This improves overall system efficiency, lowers cooling requirements, and enhances the operational lifespan of the RF amplification system.
