MRFE6VP61K25HR6 Overview
The MRFE6VP61K25HR6 is a high-power LDMOS transistor designed specifically for RF power amplification in industrial and communication applications. Delivering robust output power at frequencies up to 2.5 GHz, it offers exceptional linearity and efficiency, making it ideal for base station transmitters and broadband amplification tasks. This device is engineered to withstand demanding operational conditions, featuring a rugged package and optimized thermal performance. Engineers and sourcing specialists will find this component valuable for high-reliability systems requiring stable gain and optimized power density. For detailed manufacturer information, visit IC Manufacturer.
MRFE6VP61K25HR6 Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 0.45 GHz to 2.5 GHz |
| Output Power (P1dB) | 125 W typical |
| Gain | 15 dB typical |
| Operating Voltage (VDS) | 28 V |
| Drain Current (ID) | 12 A typical |
| Package Type | Hermetic ceramic package |
| Power Gain Flatness | ??1.5 dB typical |
| Thermal Resistance (R??JC) | 0.17 ??C/W typical |
| Impedance | 50 ?? |
| Input/Output Matching | Internally matched for broadband operation |
MRFE6VP61K25HR6 Key Features
- High Output Power Capability: Supports up to 125 W output power, enabling strong signal transmission for demanding RF applications.
- Broadband Frequency Operation: Covers 0.45 to 2.5 GHz range, allowing versatile use across multiple communication bands.
- Excellent Gain Stability: Provides consistent 15 dB gain with minimal variation, ensuring predictable amplification performance.
- Robust Hermetic Packaging: Ensures device reliability under harsh operating environments through superior thermal management and protection.
- Optimized Thermal Resistance: Low junction-to-case thermal resistance improves heat dissipation, enhancing overall device longevity and reliability.
- Internal Impedance Matching: Integrated input/output matching reduces external component count, simplifying circuit design and improving integration.
MRFE6VP61K25HR6 Advantages vs Typical Alternatives
This device stands out against conventional RF power transistors by offering a combination of high output power and broad frequency coverage with superior linearity. Its low thermal resistance and hermetic packaging contribute to better reliability and thermal handling compared to typical alternatives. Integrated impedance matching simplifies design efforts and improves system efficiency, reducing the need for complex external matching networks.
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Typical Applications
- Wireless communication base stations ?C ideal for power amplification in cellular infrastructure supporting multiple frequency bands due to its broadband capabilities and high output power.
- Industrial RF heating ?C capable of delivering consistent power output for dielectric heating applications requiring robust and reliable high-frequency amplification.
- Broadcast transmitters ?C suitable for VHF/UHF band amplification where linearity and power efficiency are critical for signal quality.
- Test and measurement equipment ?C used in RF signal generation and amplification modules requiring stable gain and power handling.
MRFE6VP61K25HR6 Brand Info
The MRFE6VP61K25HR6 is part of the latest generation of LDMOS RF power transistors developed by a leading semiconductor manufacturer known for its high-performance RF components. This product exemplifies the brand??s commitment to delivering advanced semiconductor solutions that meet the rigorous demands of modern communication and industrial systems. Designed with state-of-the-art fabrication techniques, the device ensures consistent quality and reliability, supporting engineers in achieving optimal system performance and longevity.
FAQ
What frequency range does this transistor support?
The transistor operates effectively over a wide frequency range from 0.45 GHz to 2.5 GHz, making it suitable for a variety of wireless communication bands and broadband RF applications.
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What level of output power can be expected from this device?
Typical output power at the 1 dB compression point is approximately 125 W, enabling high-power transmission suitable for base stations and industrial RF systems.
How does the packaging affect device performance?
The hermetic ceramic package provides enhanced protection against environmental factors and improves thermal dissipation with a low junction-to-case thermal resistance of about 0.17 ??C/W, contributing to device reliability and stability.
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Is impedance matching required externally?
This transistor includes internal input and output impedance matching for broadband operation at 50 ??, reducing the need for extensive external matching components and simplifying circuit design.
What typical applications is this transistor best suited for?
It is ideal for wireless communication base stations, industrial RF heating, broadcast transmitters, and RF test equipment, where high power, linearity, and reliability are essential.
