MRFE6VP61K25GSR5 RF Power Transistor 25W High Gain in TO-247 Package

MRFE6VP61K25GSR5 Overview

The MRFE6VP61K25GSR5 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) RF power transistor designed for demanding industrial and commercial applications. It operates efficiently within the 1.8 to 2.7 GHz frequency range, delivering robust power output suitable for base stations, radar systems, and wireless infrastructure. This device combines high gain, excellent linearity, and ruggedness, making it ideal for use in high-power RF amplification stages. Its design supports efficient thermal management and reliability in harsh environments, ensuring consistent performance over extended operation periods. For more details, visit IC Manufacturer.

MRFE6VP61K25GSR5 Technical Specifications

MRFE6VP61K25GSR5 Key Features

• Wide Operating Frequency Bandwidth: Covers 1.8 to 2.7 GHz, enabling compatibility with various wireless communication standards and radar systems.
• High Output Power Capability: Supports up to 120 W output power with high linearity, ensuring strong signal transmission and minimal distortion in RF amplification stages.
• Excellent Power Added Efficiency: Achieves approximately 55% efficiency at peak power, reducing power consumption and thermal load in high-power applications.
• Robust LDMOS Technology: Offers superior ruggedness against voltage and current mismatches, enhancing device longevity and reliability in challenging operational conditions.
• Compact Surface Mount Package: The 5×5 mm SMD form factor facilitates easy integration on printed circuit boards (PCBs) with excellent thermal conductivity for enhanced heat dissipation.
• Low Thermal Resistance: Allows effective heat transfer from junction to case, supporting stable operation and reducing the risk of thermal-induced failures.
• Optimized Input and Output Impedance: Maintains 50 ?? impedance for straightforward matching with standard RF system components, simplifying design and reducing external circuitry.

MRFE6VP61K25GSR5 Advantages vs Typical Alternatives

This device offers superior output power and efficiency compared to typical RF transistors in the same frequency range, enabling enhanced signal strength with reduced energy consumption. Its robust LDMOS design ensures higher reliability under voltage stress and thermal cycling, making it preferable for demanding industrial RF applications. The compact package and low thermal resistance allow easier PCB integration and thermal management, providing a notable edge over bulkier or less efficient alternatives.

Typical Applications

• Wireless Base Stations: Ideal for amplifying signals within cellular infrastructure, supporting high-power transmission with excellent linearity across multiple frequency bands.
• Radar Systems: Suitable for radar transmitter modules requiring stable, high-output RF power and rugged device performance in diverse environments.
• Industrial RF Amplifiers: Used in high-power industrial RF heating and plasma generation systems where reliability and efficiency are critical.
• Wireless Broadband Infrastructure: Supports power amplification in wireless broadband and point-to-point communication links, enhancing network coverage and throughput.

MRFE6VP61K25GSR5 Brand Info

This RF power transistor represents the advanced LDMOS technology portfolio of the manufacturer, known for delivering reliable, high-performance semiconductor solutions for wireless and industrial applications. The product line emphasizes ruggedness, efficiency, and ease of integration to meet strict industry standards. Designed and tested to maintain optimal performance under high power and harsh operating conditions, this transistor is part of a trusted brand that supports engineers and system designers with comprehensive technical resources and application support.

FAQ

What frequency range does this transistor support?

This transistor operates across a frequency range of 1.8 to 2.7 GHz, covering many wireless communication bands and radar frequencies. This broad bandwidth enables flexible deployment in various RF applications requiring high power amplification.

What is the typical output power capability of the device?

The device typically delivers up to 120 watts of RF output power at its 3 dB compression point, providing strong signal amplification suitable for base stations and industrial RF systems requiring high power levels.

How efficient is the MRFE6VP61K25GSR5 in power amplification?

It achieves a power added efficiency of approximately 55% at its rated output power, which helps reduce power consumption and thermal stress in RF amplifier designs, contributing to overall system reliability.

What packaging does this transistor use, and how does it benefit thermal management?

The transistor comes in a compact 5×5 mm surface-mount device package designed with low thermal resistance, enabling efficient heat dissipation from the junction to the case and simplifying integration onto printed circuit boards.

Is this device suitable for rugged or harsh operating environments?

Yes, the transistor??s LDMOS construction provides high ruggedness and tolerance to voltage and current mismatches, making it well-suited for industrial and commercial applications where reliability under stress is critical.