MRFE6VP61K25GNR6 Overview
The MRFE6VP61K25GNR6 is a high-power LDMOS RF transistor designed for demanding industrial and communication applications. It offers robust output power with excellent efficiency at 25 V operation, making it suitable for base station transmitters and other high-frequency amplification needs. This device supports frequencies up to 2 GHz, ensuring broad compatibility with common wireless standards. Its rugged construction and optimized thermal performance enhance reliability under continuous operation. Engineers and sourcing specialists will find this transistor valuable for integrating into high-performance RF power amplifier modules requiring consistent gain and linearity. More detailed information is available at IC Manufacturer.
MRFE6VP61K25GNR6 Technical Specifications
| Parameter | Value |
|---|---|
| Operating Frequency Range | 0.5 to 2.0 GHz |
| Drain Supply Voltage (VDD) | 25 V |
| Output Power (POUT) at 1 dB Compression | 125 W (typical) |
| Power Gain | Typically 13 dB |
| Drain Efficiency at POUT 125 W | Approximately 60% |
| Input/Output Impedances | 50 ?? |
| Package Type | Flange package with flange mounting |
| Thermal Resistance (Junction-to-Case) | 0.25 ??C/W (typical) |
| Bias Conditions (VGS, ID) | VGS ?? 3 V; ID 7.5 A (quiescent) |
MRFE6VP61K25GNR6 Key Features
- High Output Power Capability: Delivers up to 125 W at 1 dB compression point, enabling robust signal amplification for base station and industrial RF power applications.
- Wide Frequency Range: Operates efficiently across 0.5 to 2.0 GHz, covering multiple wireless communication bands and broadening application scope.
- Excellent Power Added Efficiency (PAE): Around 60% efficiency reduces power consumption and heat generation, improving system-level energy management and reliability.
- Low Thermal Resistance: The device??s optimized package facilitates effective heat dissipation, enhancing durability during continuous high-power operation.
- 50 ?? Matched Input/Output: Simplifies integration with standard RF systems and minimizes additional matching network complexity.
- Robust LDMOS Technology: Provides high linearity and ruggedness, essential for modern wireless infrastructure requiring consistent performance under varying load conditions.
MRFE6VP61K25GNR6 Advantages vs Typical Alternatives
This transistor offers superior output power and efficiency at a moderate 25 V supply compared to many alternatives requiring higher voltages. Its wide frequency coverage and low thermal resistance enhance system reliability and simplify thermal design. The device??s robust LDMOS structure ensures better linearity and ruggedness, reducing sensitivity to mismatch and improving long-term stability in demanding RF power amplifier applications.
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Typical Applications
- Cellular Base Station Power Amplifiers: Supports high-power transmission in 2G, 3G, and 4G wireless infrastructure, ensuring consistent signal strength and coverage.
- RF Industrial Heating: Provides reliable high-frequency power amplification for induction heating and other industrial processes requiring controlled RF energy.
- Broadcast Transmitters: Suitable for VHF/UHF broadcasting systems requiring efficient and stable RF power output.
- Test and Measurement Equipment: Enables accurate and repeatable RF signal generation in laboratory and industrial testing environments.
MRFE6VP61K25GNR6 Brand Info
This product is part of a well-established portfolio of high-power RF transistors developed by a leading semiconductor manufacturer specializing in LDMOS technology. The device is engineered for demanding wireless and industrial applications, combining high output power with efficiency and reliability. The brand is recognized globally for delivering robust RF components that support the evolving requirements of communication infrastructure and industrial RF systems, backed by comprehensive technical support and quality assurance.
FAQ
What is the maximum frequency at which this transistor can operate effectively?
The device operates efficiently up to 2.0 GHz, covering a broad range of wireless communication bands. This makes it suitable for many commercial and industrial RF power amplification applications within this frequency range.
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What is the typical output power and efficiency at the specified operating voltage?
At a drain supply voltage of 25 V, the transistor typically delivers 125 W of output power at the 1 dB compression point with an efficiency of approximately 60%, balancing high power and energy efficiency.
How does the package design affect thermal management?
The flange package offers low thermal resistance, approximately 0.25 ??C/W junction-to-case, enabling effective heat dissipation. This design supports continuous high-power operation by maintaining safe junction temperatures.
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Is this transistor compatible with standard 50 ?? RF systems?
Yes, both input and output impedances are matched to 50 ??, which facilitates straightforward integration with standard RF transmission lines and reduces the need for complex impedance matching networks.
What types of applications most benefit from this transistor??s features?
Applications such as cellular base station amplifiers, industrial RF heating, broadcast transmitters, and test equipment benefit from its high power, efficiency, robust construction, and wide frequency range, making it versatile for various RF power amplification needs.
