MRFE6VP5600HSR5 Overview
The MRFE6VP5600HSR5 is a high-power LDMOS RF transistor designed for linear amplification in demanding applications. Offering robust output power and excellent gain characteristics, it supports efficient operation in broadband and high-frequency environments. This device features a rugged design optimized for high reliability and thermal management, making it suitable for industrial, communications, and defense sectors. Its compact package and superior electrical performance enable seamless integration into power amplifier modules. For engineers and sourcing specialists seeking a balance of power, gain, and durability, this transistor delivers consistent results. More details are available at IC Manufacturer.
MRFE6VP5600HSR5 Technical Specifications
| Parameter | Specification |
|---|---|
| Technology | LDMOS |
| Operating Frequency Range | 400 MHz to 470 MHz |
| Output Power (P3dB) | 5600 W (typical) |
| Gain (typical) | 15 dB |
| Drain Voltage (VDS) | 50 V |
| Quiescent Drain Current (IDq) | 450 mA |
| Package Type | HSR5 (Hermetic Surface Mount) |
| Thermal Resistance (Junction to Case) | 0.03 ??C/W |
| Load Mismatch Tolerance | Full 100% mismatch |
| Operating Temperature Range | -40??C to +85??C |
MRFE6VP5600HSR5 Key Features
- High Output Power: Delivers up to 5600 W output power, enabling applications requiring significant RF amplification without compromising linearity.
- Broadband Frequency Response: Operates efficiently across 400?C470 MHz, supporting a wide range of communication and industrial frequency bands.
- Robust Load Mismatch Handling: Designed to tolerate full 100% load mismatch, enhancing reliability in variable impedance environments.
- Low Thermal Resistance: The HSR5 package facilitates excellent heat dissipation, ensuring stable operation under high power conditions and extending device lifetime.
MRFE6VP5600HSR5 Advantages vs Typical Alternatives
This transistor stands out due to its high linear output power combined with broad frequency coverage and rugged load mismatch tolerance. Compared to typical alternatives, it offers improved thermal management and reliability under harsh operating conditions. Its low quiescent current and high gain contribute to efficient power usage, making it a superior choice for applications demanding consistent performance and durability.
🔥 Best-Selling Products
Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- Broadcast Transmitters: Ideal for high-power RF amplification in VHF/UHF TV and FM radio broadcast transmitters, ensuring clear signal transmission over long distances.
- Industrial RF Systems: Suitable for use in plasma generation and induction heating where stable, high-power RF output is critical.
- Military Communications: Supports robust and reliable RF amplification in tactical radios and communication systems operating in the VHF band.
- Test and Measurement Equipment: Enables accurate and repeatable power amplification for RF testing instruments and spectrum analyzers.
MRFE6VP5600HSR5 Brand Info
This product is part of a portfolio of LDMOS RF transistors engineered for high-power, high-reliability applications. The manufacturer emphasizes rigorous quality control and advanced semiconductor fabrication processes to ensure outstanding performance. The device’s HSR5 package reflects a commitment to hermetic sealing and thermal efficiency, supporting demanding industrial and communications environments.
FAQ
What frequency range does this transistor support?
The device operates effectively across 400 MHz to 470 MHz, making it suitable for VHF band applications such as broadcast and communication systems within this spectrum.
🌟 Featured Products
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
How does the transistor handle load mismatches?
It is designed to tolerate full 100% load mismatch conditions without damage, which enhances system reliability when encountering variable or unpredictable load impedances.
What are the thermal management features of this component?
The HSR5 package offers a low thermal resistance junction-to-case rating of 0.03 ??C/W, enabling efficient heat dissipation and maintaining device stability at high power levels.
📩 Contact Us
Is this device suitable for continuous operation in harsh environments?
Yes, it supports an operating temperature range from -40??C to +85??C and is built for rugged use, making it ideal for industrial and military applications requiring durability.
What is the typical gain and quiescent current of this transistor?
The transistor typically provides 15 dB gain with a quiescent drain current of 450 mA, balancing high amplification with reasonable power consumption for efficient operation.
