MRFE6VP5600HR6 Overview
The MRFE6VP5600HR6 is a high-performance LDMOS RF power transistor designed for demanding industrial and commercial RF power amplifier applications. Featuring robust power handling and linearity, it operates efficiently across a wide frequency range, making it ideal for modern communication infrastructure. This device supports high gain with excellent thermal stability and ruggedness, enabling reliable operation in challenging environments. Engineered to deliver consistent output power and efficiency, it is a preferred choice for applications requiring dependable amplification. Learn more from the IC Manufacturer for this advanced RF transistor solution.
MRFE6VP5600HR6 Technical Specifications
| Parameter | Specification |
|---|---|
| Operating Frequency Range | 1420 to 1510 MHz |
| Output Power (P3dB) | 5600 W (typical) |
| Gain | 16.5 dB (typical) |
| Drain Efficiency | 65% (typical at P3dB) |
| Supply Voltage (VDD) | 50 V (typical) |
| Gate Voltage (VGG) | -4 V (typical quiescent bias) |
| Package Type | Flange-mount ceramic package |
| Thermal Resistance, Junction-to-Case | 0.02 ??C/W (typical) |
| Input/Output Match | 50 ?? |
| Operating Temperature Range | -40 to +85 ??C |
MRFE6VP5600HR6 Key Features
- High Output Power: Delivers up to 5600 W at 1420?C1510 MHz, enabling efficient amplification in high-power RF systems.
- Wide Frequency Range: Supports operation from 1420 to 1510 MHz, covering key bands for communication and industrial applications.
- Excellent Gain and Linearity: Provides 16.5 dB gain with low distortion, ensuring signal integrity in sensitive RF environments.
- Robust Thermal Management: Low thermal resistance and ceramic flange package enhance heat dissipation, improving reliability under continuous operation.
- High Efficiency: Achieves 65% drain efficiency at rated output power, reducing power consumption and cooling requirements.
- Rugged Construction: Designed to withstand harsh operating conditions, offering enhanced ruggedness for industrial-grade applications.
- 50 ?? Input/Output Matching: Simplifies integration with standard RF system architectures, minimizing design complexity.
MRFE6VP5600HR6 Advantages vs Typical Alternatives
This transistor offers superior power output and efficiency compared to typical RF power devices in the same frequency range. Its robust ceramic package and low thermal resistance ensure enhanced reliability and thermal stability under high-power conditions. The wide operating frequency and high gain improve system flexibility and signal quality, making it an advantageous choice for engineers prioritizing performance and durability in demanding RF amplifier designs.
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Typical Applications
- Base station transmitters for cellular and microwave communication, where high linear output power and efficiency are critical for maintaining signal quality and coverage.
- Industrial RF heating equipment requiring reliable power amplification at L-band frequencies.
- Military and aerospace RF power amplifiers that demand rugged devices capable of operating under extreme environmental conditions.
- Broadcast transmitters and radar systems needing consistent high-power output with stable gain and minimal distortion.
MRFE6VP5600HR6 Brand Info
The MRFE6VP5600HR6 is a flagship RF power transistor from a leading semiconductor manufacturer specializing in high-reliability LDMOS devices. This product line is recognized for its advanced process technology and rigorous quality standards, ensuring consistent performance in mission-critical RF power applications. The brand??s focus on innovation and durability positions this transistor as a dependable component for system designers seeking long-term operational stability and efficient power delivery in demanding industrial and commercial environments.
FAQ
What frequency range does the MRFE6VP5600HR6 support?
The device operates effectively within the 1420 to 1510 MHz frequency band. This range targets L-band applications commonly used in communication and industrial RF systems, offering flexibility for various high-power amplifier designs.
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What is the typical output power capability of this transistor?
This transistor delivers approximately 5600 watts of output power at the 3 dB compression point, making it suitable for high-power RF amplification tasks where substantial linear power is required.
How does the MRFE6VP5600HR6 manage thermal dissipation?
It features a low junction-to-case thermal resistance of about 0.02 ??C/W and comes in a ceramic flange-mount package. These design elements help efficiently transfer heat away from the transistor, supporting reliable operation under continuous high-power conditions.
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Can this transistor be easily integrated into existing RF systems?
Yes, the device provides 50 ?? input and output impedance matching, which aligns with industry-standard RF system architectures. This compatibility simplifies integration and reduces the need for additional matching networks.
What are the typical applications for this RF power transistor?
It is commonly used in cellular base station transmitters, industrial RF heating, military and aerospace amplifiers, as well as broadcast and radar systems. Its combination of high power, efficiency, and ruggedness suits a wide array of demanding RF power amplifier applications.
