MRFE6VP5600HR5 Overview
The MRFE6VP5600HR5 is a high-power LDMOS RF transistor optimized for linear and efficient amplification in wireless infrastructure and industrial applications. Offering a robust combination of high gain, output power, and efficiency, this device is designed for demanding RF environments, supporting frequencies up to 2200 MHz. Its rugged construction and excellent thermal performance ensure reliable operation under high voltage and power conditions. Engineers and sourcing specialists will find this transistor ideal for base station amplifiers, broadband amplifiers, and other power amplification tasks. For detailed product support and trusted supply, visit IC Manufacturer.
MRFE6VP5600HR5 Technical Specifications
| Parameter | Specification |
|---|---|
| Technology | LDMOS (Laterally Diffused Metal-Oxide Semiconductor) |
| Frequency Range | 380 MHz to 2200 MHz |
| Output Power (P3dB) | 5600 W (at 2200 MHz) |
| Operating Voltage (Vds) | 50 V |
| Gain | 16 dB (typical at 2200 MHz) |
| Drain Efficiency | ?? 55% (typical at P3dB) |
| Package Type | Flange Package with Integrated Heat Sink |
| Thermal Resistance (junction-to-case) | 0.05 ??C/W (typical) |
| Input Impedance | 50 ?? nominal |
MRFE6VP5600HR5 Key Features
- High Output Power Capability: Delivers up to 5600 W at 2200 MHz, enabling robust signal amplification in high-demand RF applications.
- Wide Frequency Range: Supports 380 MHz to 2200 MHz operation, providing flexibility across various wireless communication bands.
- Superior Thermal Management: Low thermal resistance and integrated heat sink design ensure enhanced reliability and long device lifetime under high power dissipation.
- Efficient Drain Efficiency: Typical efficiency of 55% or higher reduces power consumption and thermal load, improving overall system performance.
- Rugged LDMOS Technology: Provides high breakdown voltage and strong electrostatic discharge (ESD) tolerance for reliable operation in harsh industrial environments.
- Optimized Gain Performance: Typical gain of 16 dB simplifies amplifier design and reduces the need for additional gain stages.
- Industry-Standard Package: Flange mounting supports easy integration into existing RF modules and systems while facilitating effective heat dissipation.
MRFE6VP5600HR5 Advantages vs Typical Alternatives
Compared to typical RF power transistors, this device offers superior power density and efficiency at frequencies up to 2200 MHz. Its robust LDMOS design enhances reliability in high-voltage environments, while the low thermal resistance package improves heat management. These factors contribute to reduced system complexity, lower cooling requirements, and extended component life, making it an optimal solution for wireless infrastructure and industrial amplifier designs.
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Typical Applications
- Wireless Infrastructure Power Amplifiers: Provides high linear output power and efficiency for cellular base stations, enabling enhanced coverage and signal quality.
- Broadband RF Amplifiers: Suitable for broadband communication systems requiring wide frequency coverage and high linearity.
- Industrial RF Heating: Ideal for industrial processes that use RF energy for heating, drying, or curing applications.
- Military and Aerospace Communications: Supports high-power RF amplification in rugged environments where reliability and performance are critical.
MRFE6VP5600HR5 Brand Info
This high-performance RF transistor is part of the advanced LDMOS product line from a leading semiconductor manufacturer specializing in RF power devices. It exemplifies the brand??s commitment to providing reliable, efficient, and high-power solutions for wireless communication and industrial applications. Engineered with precision and built to rigorous quality standards, it supports demanding designs requiring robust performance and long operational life.
FAQ
What frequency ranges does this transistor support?
The device operates effectively across a wide frequency band from 380 MHz up to 2200 MHz, making it suitable for multiple wireless communication standards and broadband applications.
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What is the typical output power rating for this transistor?
It is rated for an output power of approximately 5600 watts at 2200 MHz, enabling high-power amplification suitable for base station and industrial RF amplifier designs.
How does the packaging contribute to device performance?
The flange package with integrated heat sink provides excellent thermal conductivity, reducing junction temperature during operation and enhancing reliability and lifetime under high power dissipation.
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What efficiency can be expected from this transistor during operation?
The device typically achieves a drain efficiency of 55% or greater at its rated output power, helping to reduce power consumption and thermal management challenges in RF amplifier systems.
Is this transistor suitable for rugged industrial environments?
Yes, the LDMOS technology and robust construction provide high breakdown voltage and strong tolerance to electrostatic discharge, making it well-suited for demanding industrial and military applications.
