MRFE6VP100HSR5 Overview
The MRFE6VP100HSR5 is a high-power LDMOS RF transistor designed for efficient amplification in demanding industrial applications. It offers robust performance up to 175 MHz, delivering a typical output power of 100 W with high gain and linearity. Optimized for broadband use, this device supports high efficiency and excellent thermal stability, making it suitable for wireless infrastructure, broadcast transmitters, and industrial RF systems. Its rugged design ensures reliable operation in harsh environments. For detailed technical support and purchasing options, visit the IC Manufacturer website.
MRFE6VP100HSR5 Technical Specifications
| Parameter | Value |
|---|---|
| Frequency Range | 30?C175 MHz |
| Output Power (P3dB) | 100 W (typical) |
| Gain (typical) | 15 dB |
| Efficiency (typical) | ?? 60% |
| Operating Voltage (Vds) | 50 V |
| Input/Output Impedance | 50 ?? |
| Package Type | Flanged ceramic package |
| Thermal Resistance (Junction to Case) | 0.28 ??C/W |
MRFE6VP100HSR5 Key Features
- High Power Output: Delivers up to 100 W of RF power, enabling strong signal transmission with minimal distortion for industrial and broadcast applications.
- Broadband Frequency Support: Operates efficiently from 30 to 175 MHz, allowing flexible integration across various RF systems and frequency bands.
- Low Thermal Resistance: The advanced flanged ceramic package ensures effective heat dissipation, improving reliability and extending device lifetime under continuous operation.
- High Gain and Efficiency: With a typical gain of 15 dB and efficiency above 60%, it supports energy-conscious designs that reduce overall power consumption.
MRFE6VP100HSR5 Advantages vs Typical Alternatives
This transistor stands out due to its combination of high power output and broadband frequency capability, which many alternatives lack. Its superior thermal management ensures consistent performance under heavy loads, while the high gain and efficiency reduce system complexity and power requirements. These advantages make it a reliable and cost-effective choice for demanding RF amplification roles.
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Typical Applications
- Wireless Infrastructure: Ideal for base station power amplifiers where stable, high power and linear amplification across VHF/UHF bands are necessary for effective communication.
- Broadcast Transmitters: Supports FM and TV transmission systems requiring robust output power and broad frequency coverage.
- Industrial RF Systems: Suitable for induction heating and plasma generation where high power RF signals are essential.
- Military and Aerospace: Used in communication and radar equipment that demands rugged, high-performance RF transistors in harsh environments.
MRFE6VP100HSR5 Brand Info
The MRFE6VP100HSR5 is part of a respected family of LDMOS transistors engineered for high power and reliability by a leading semiconductor manufacturer specializing in RF solutions. This product reflects the brand??s commitment to quality, durability, and cutting-edge RF technology, targeting professional engineers and system designers requiring robust components for critical RF amplification tasks.
FAQ
What frequency range does this RF transistor support?
The device operates efficiently across a broad frequency range of 30 to 175 MHz, making it suitable for various VHF and lower UHF band applications, including broadcast and industrial communications.
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What power output can be expected from this transistor?
It typically delivers 100 W of output power at the 3 dB compression point, supporting high-power amplification needs in RF systems with good linearity and minimal signal distortion.
How does the package design affect performance?
The flanged ceramic package provides excellent thermal conductivity and mechanical stability, which helps maintain low junction temperatures and enhances device reliability during continuous high-power operation.
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Is this transistor optimized for efficiency?
Yes, the typical efficiency exceeds 60%, allowing for energy-efficient designs that reduce heat generation and power consumption in RF amplification stages.
What typical applications benefit most from this transistor?
Common uses include wireless infrastructure base stations, broadcast transmitters, industrial RF power systems like induction heating, and military communications due to its high power, broadband capability, and rugged design.
