MRFE6S9060NR1 Overview
The MRFE6S9060NR1 is a high-performance LDMOS RF power transistor designed for industrial and commercial RF amplification applications. Operating efficiently within the 902?C928 MHz frequency band, it delivers a robust output power of up to 90 W with strong gain and linearity. The device is engineered to support demanding wireless infrastructure, ISM band applications, and broadband RF power amplifiers, providing excellent reliability and thermal management. Its rugged construction and advanced semiconductor technology make it an optimal choice for engineers seeking a durable and efficient RF power solution. For detailed product support and resources, visit IC Manufacturer.
MRFE6S9060NR1 Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Operating Frequency Range | 902 to 928 | MHz |
| Output Power (POUT) | 90 | Watts |
| Gain (Typical) | 13.5 | dB |
| Drain Efficiency | 45 | Percent (%) |
| Supply Voltage (VDD) | 28 | Volts |
| Input Return Loss | ?C10 | dB |
| Output Return Loss | ?C10 | dB |
| Package Type | Flanged Package | ?? |
| Thermal Resistance | 0.3 | ??C/W |
MRFE6S9060NR1 Key Features
- Wideband Frequency Coverage: Supports 902 to 928 MHz, enabling flexible deployment in ISM band and broadband RF applications, facilitating multi-standard compatibility.
- High Output Power Capability: Capable of delivering 90 W output power, ensuring strong signal amplification for wireless infrastructure and industrial transmitters.
- Excellent Gain and Linearity: Provides a typical gain of 13.5 dB, which improves signal quality and reduces distortion in communication systems.
- Robust Thermal Management: Low thermal resistance of 0.3 ??C/W promotes efficient heat dissipation, enhancing device reliability and longevity in high-power operation.
- Rugged Flanged Package: The mechanical design supports easy mounting and excellent mechanical stability under harsh operational environments.
- Optimized Efficiency: Achieves approximately 45% drain efficiency, reducing power loss and operational costs in long-term RF amplification tasks.
MRFE6S9060NR1 Advantages vs Typical Alternatives
This transistor offers superior power density and gain performance compared to typical RF power transistors in its class. Its wideband frequency operation and high thermal reliability make it an ideal choice for industrial and ISM band applications. Enhanced efficiency and rugged packaging contribute to lower downtime and better integration, providing engineers with a dependable solution that outperforms many standard devices in terms of power handling and thermal management.
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Typical Applications
- Industrial, Scientific, and Medical (ISM) Band Transmitters: Delivers stable and efficient power amplification for ISM band RF systems operating in the 902 to 928 MHz range, supporting industrial heating and medical equipment.
- Wireless Infrastructure: Suitable for base stations and repeaters requiring robust RF amplification with good linearity and power output.
- Broadband RF Power Amplifiers: Enables effective amplification across a wide frequency band, supporting flexible communication standards and broadband signal transmission.
- RF Signal Boosting in Commercial Systems: Used in commercial RF communication devices where reliable power output and thermal stability are critical for maintaining signal integrity.
MRFE6S9060NR1 Brand Info
This product is part of a family of high-performance LDMOS RF transistors designed by a leading semiconductor manufacturer specializing in power amplification devices. The transistor embodies advanced semiconductor fabrication techniques and rigorous quality standards to meet industrial and commercial RF power amplification demands. It is widely recognized for its robust construction, high power density, and superior thermal management capabilities, making it a trusted component for engineers designing high-reliability wireless and industrial RF systems.
FAQ
What frequency range does this transistor cover?
The device operates effectively within the 902 to 928 MHz frequency band, making it suitable for ISM band applications and other RF systems operating in this range.
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What is the maximum output power this transistor can deliver?
It provides a maximum output power of 90 watts, suitable for medium to high-power RF amplification requirements in wireless and industrial applications.
How does the thermal resistance affect device performance?
With a low thermal resistance of 0.3 ??C/W, the transistor efficiently dissipates heat, reducing the risk of thermal runaway and improving long-term reliability during continuous high-power operation.
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What packaging does this transistor use, and why is it important?
The transistor is housed in a flanged package, which allows for secure mounting and effective heat sinking. This packaging enhances mechanical stability and thermal performance in demanding environments.
Can this transistor be used in broadband RF amplifier designs?
Yes, its wideband frequency capability and consistent gain make it well-suited for broadband RF power amplifier designs, supporting a variety of communication standards and signal types.
