MRFE6S9060GNR1 Overview
The MRFE6S9060GNR1 is a high-performance LDMOS RF power transistor optimized for industrial and communications applications requiring robust output power and efficiency. Designed to operate within the 902?C928 MHz ISM band, this device delivers up to 60 W of continuous output power with high gain and linearity. Its rugged construction ensures reliable operation under demanding conditions, making it suitable for base stations, ISM applications, and other RF power amplification needs. Available in a compact package, it supports efficient thermal management and ease of integration into existing designs. For more detailed product information, visit IC Manufacturer.
MRFE6S9060GNR1 Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 902 ?C 928 MHz |
| Output Power (P3dB) | 60 W (typical) |
| Gain (Small Signal) | Typically 13.5 dB |
| Drain Voltage (VDS) | 28 V (max) |
| Drain Current (ID) | 3.5 A (typical) |
| Input Matching Impedance | 50 ?? |
| Package Type | Flange mount (Hermetic metal package) |
| Thermal Resistance (Junction-to-Case) | 0.4 ??C/W (typical) |
| Operating Temperature Range | -40 ??C to +85 ??C |
MRFE6S9060GNR1 Key Features
- High Output Power Capability: Delivers up to 60 W at 900 MHz, enabling strong signal transmission with minimal distortion.
- Wide Frequency Range: Supports the 902?C928 MHz ISM band, ensuring compatibility with common industrial, scientific, and medical RF systems.
- Excellent Linearity: Provides consistent gain and low intermodulation distortion, critical for high-fidelity communication signals.
- Robust Thermal Management: Low thermal resistance package facilitates efficient heat dissipation, enhancing reliability and device longevity.
- Hermetic Metal Package: Protects against environmental factors, improving device durability in harsh industrial environments.
- Optimized Input and Output Matching: 50 ?? impedance simplifies integration with standard RF components and reduces design complexity.
- Efficient Power Operation: Operates at 28 V drain voltage with high drain current capability, balancing power efficiency and performance.
MRFE6S9060GNR1 Advantages vs Typical Alternatives
This RF transistor distinguishes itself through its combination of high output power and excellent linearity within the 900 MHz ISM band. Compared to typical alternatives, it offers superior thermal performance due to its low junction-to-case thermal resistance and rugged hermetic packaging. These features enhance operational reliability, especially in demanding industrial applications. Furthermore, its optimized 50 ?? input/output impedance facilitates straightforward system integration, reducing design time and improving overall efficiency.
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Typical Applications
- Industrial, Scientific, and Medical (ISM) Band RF Amplifiers: Ideal for systems requiring robust power amplification within the 902?C928 MHz frequency range, such as RFID readers and microwave heating devices.
- Base Station Transmitters: Supports reliable, high-power RF amplification for remote communication infrastructure.
- RF Power Amplifiers for Wireless Communication: Suitable for fixed wireless applications and data transmission equipment.
- Test and Measurement Equipment: Provides consistent gain and power output for precise RF testing in laboratory environments.
MRFE6S9060GNR1 Brand Info
This transistor is manufactured under a trusted semiconductor brand known for delivering high-quality RF power devices tailored for industrial and communication markets. The product line emphasizes robustness, efficiency, and ease of integration. Each unit undergoes strict quality control to meet demanding specifications and ensure dependable performance in a variety of applications. The offering supports engineers and designers in achieving reliable, high-power RF amplification with reduced development cycles.
FAQ
What is the typical operating frequency range for this RF transistor?
The device is specifically designed to operate within the 902 to 928 MHz frequency range, making it suitable for ISM band applications and other RF systems that require efficient amplification in this spectrum.
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What power output can I expect from this transistor?
It typically delivers up to 60 watts of output power at the 3 dB compression point, which ensures strong signal amplification while maintaining linearity and signal integrity.
How does the package design benefit thermal management?
The hermetic metal flange-mounted package offers low thermal resistance (approximately 0.4 ??C/W junction-to-case), enabling effective heat dissipation during high-power operation and thereby enhancing device reliability.
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Is this transistor compatible with standard 50 ?? RF systems?
Yes, the input and output matching are optimized for 50 ?? impedance, facilitating easy integration into standard RF circuits without requiring complex impedance matching networks.
What are the typical applications where this device is used?
This transistor is commonly used in industrial, scientific, and medical RF amplifiers, base station transmitters, wireless communication equipment, and test and measurement instrumentation that require reliable high-power RF amplification.
