MRF8VP13350NR5 Overview
The MRF8VP13350NR5 is a high-performance RF power transistor designed for industrial and commercial microwave applications. Offering robust power output and efficiency, this device operates effectively in high-frequency environments, making it ideal for demanding amplification tasks. Its rugged design ensures reliability under continuous operation, while its compact form factor supports space-constrained system integration. Engineers and sourcing specialists will find this transistor advantageous for applications requiring consistent gain and linearity at microwave frequencies. For further technical details and purchasing options, visit IC Manufacturer.
MRF8VP13350NR5 Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 750 MHz to 1300 MHz |
| Output Power (P3dB) | 350 Watts |
| Gain at 900 MHz | 15.5 dB (typical) |
| Drain-Source Voltage (VDS) | 50 V (max) |
| Gate-Source Voltage (VGS) | -5 V to +2 V |
| Operating Temperature Range | -40??C to +150??C |
| Package Type | Flange Mount |
| Typical Efficiency | 60% (at P3dB) |
MRF8VP13350NR5 Key Features
- High Output Power: Delivers up to 350 W of power, enabling robust signal amplification essential for high-performance RF systems.
- Wide Frequency Range: Operates efficiently between 750 MHz and 1300 MHz, covering critical bands for communication and industrial applications.
- Thermal Reliability: Designed with a flange mount package for effective heat dissipation, ensuring stable operation over extended periods.
- Optimized Gain and Linearity: Provides consistent gain of 15.5 dB at 900 MHz, facilitating precise signal amplification with minimal distortion.
MRF8VP13350NR5 Advantages vs Typical Alternatives
This transistor offers superior power output and efficiency compared to typical alternatives in the same frequency range, providing enhanced signal strength and reduced thermal stress. Its wide operating temperature and robust package improve reliability, making it ideal for demanding industrial environments. These features combine to deliver better performance and longer operational life, reducing maintenance cycles and system downtime.
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Typical Applications
- RF Power Amplifiers in Base Stations: Used to boost signal strength in cellular infrastructure, supporting reliable wireless communication networks.
- Industrial Heating Systems: Provides efficient microwave power for material processing and drying applications.
- Broadcast Transmitters: Suitable for enhancing transmission power in VHF/UHF broadcasting equipment.
- Military and Aerospace Communications: Supports high-reliability signal amplification under harsh environmental conditions.
MRF8VP13350NR5 Brand Info
The MRF8VP13350NR5 is part of a well-established portfolio of RF power transistors engineered for high-reliability industrial and commercial applications. Manufactured with advanced semiconductor processes, this device reflects rigorous quality standards to meet stringent performance demands. The brand emphasizes robust design, thermal management, and consistent electrical characteristics, ensuring that engineers can deploy this transistor confidently across various microwave frequency amplification challenges.
FAQ
What is the maximum power output capability of this transistor?
The transistor can deliver up to 350 watts of output power at its 3 dB compression point, making it suitable for medium to high-power RF amplification tasks in the 750 MHz to 1300 MHz frequency range.
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What type of package does this transistor use and why is it important?
This device utilizes a flange mount package, which is critical for efficient heat dissipation during operation. Proper thermal management extends device life and ensures reliable performance in continuous or high-duty cycle applications.
Can this transistor operate in extreme temperature environments?
Yes, it is rated to operate over a wide temperature range from -40??C to +150??C, enabling use in harsh industrial or outdoor environments where temperature variations are significant.
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What frequency range is this transistor optimized for?
The transistor is optimized for operation between 750 MHz and 1300 MHz, covering important bands for wireless communication, industrial RF heating, and broadcast applications.
How does the gain performance of this transistor benefit RF system design?
With a typical gain of 15.5 dB at 900 MHz, the device provides consistent signal amplification that helps maintain signal integrity, reduces the need for additional amplification stages, and improves overall system efficiency.
