MRF6V14300HSR5 Overview
The MRF6V14300HSR5 is a high-power LDMOS RF transistor designed for linear and efficient amplification in demanding industrial and commercial applications. With a frequency range extending up to 600 MHz and capable of delivering output power up to 300 watts, it enables robust performance for broadband and narrowband systems. Its rugged construction provides enhanced thermal stability and reliability in harsh operating environments. This device is optimized for use in high-efficiency power amplifiers, supporting communication infrastructure and industrial RF systems. For detailed technical support and sourcing, visit IC Manufacturer.
MRF6V14300HSR5 Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 225 ?C 600 MHz |
| Output Power (CW) | 300 W (typical) |
| Gain | 14.5 dB (typical at 450 MHz) |
| Power Added Efficiency (PAE) | ?? 55% (typical) |
| Supply Voltage | 50 V (nominal) |
| Input/Output Impedance | 50 ?? |
| Package Type | Flange Mount, Hermetically Sealed |
| Operating Temperature Range | -30??C to +85??C |
| Thermal Resistance (Junction-to-Case) | 0.4 ??C/W (typical) |
MRF6V14300HSR5 Key Features
- High Output Power: Delivers up to 300 W continuous wave power, enabling strong signal amplification for demanding RF applications.
- Wide Frequency Band: Operates effectively from 225 MHz to 600 MHz, providing flexibility across multiple communication bands.
- Excellent Power Added Efficiency: Typical PAE of 55% helps reduce heat dissipation and improves overall system energy efficiency.
- Robust Thermal Management: Low junction-to-case thermal resistance supports reliable operation under high power and elevated temperatures.
- Hermetically Sealed Package: Ensures long-term device reliability in harsh environmental conditions common in industrial settings.
- 50 ?? Impedance Matching: Simplifies integration into standard RF systems without additional impedance transformation components.
- Superior Linearity: Supports linear amplification, critical for communications systems requiring low distortion and high signal integrity.
MRF6V14300HSR5 Advantages vs Typical Alternatives
This transistor offers a combination of high power output, broad frequency coverage, and efficient operation that typically surpasses many standard LDMOS devices. Its hermetically sealed flange mount package enhances reliability under tough conditions, while the high gain and power added efficiency reduce system complexity and operating costs. These advantages make it a preferred choice where performance consistency and thermal robustness are critical.
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Typical Applications
- Industrial RF Power Amplifiers: Ideal for use in broadband and narrowband power amplifier stages requiring high linearity and power in the 225?C600 MHz range.
- Broadcast Transmitters: Suitable for medium-power VHF transmitters used in commercial and public radio broadcasting systems.
- Communication Infrastructure: Supports cellular base stations and trunked radio systems needing reliable, high-power RF amplification.
- Military and Aerospace RF Systems: Provides ruggedness and performance required for defense communication and radar equipment operating in harsh environments.
MRF6V14300HSR5 Brand Info
The MRF6V14300HSR5 is part of a well-established series of LDMOS RF transistors known for their reliability and high-performance amplification capabilities. Designed to meet the rigorous demands of industrial and commercial RF power applications, this device benefits from advanced semiconductor fabrication techniques ensuring consistent quality and longevity. The manufacturer supports comprehensive documentation and application expertise to assist engineers and sourcing specialists in system design and integration.
FAQ
What is the maximum operating frequency of this transistor?
The device operates effectively up to 600 MHz, making it suitable for applications within the VHF and lower UHF bands where high power linear amplification is required.
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Can this transistor handle continuous wave (CW) power output?
Yes, it supports continuous wave power output of up to 300 watts, enabling steady-state operation in amplifier designs without degradation in performance.
What package type does the transistor use?
It is housed in a hermetically sealed flange mount package, providing enhanced environmental protection and thermal management suited for industrial use.
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How efficient is the device at converting DC power to RF output?
The power added efficiency typically reaches 55%, which helps reduce heat dissipation and contributes to more energy-efficient amplifier systems.
Is the device compatible with standard 50-ohm RF systems?
Yes, the transistor is designed with a 50 ?? input and output impedance, simplifying integration with standard RF system components and minimizing the need for additional matching networks.
