MRF6V12500HSR5 RF Power Transistor ?C High Gain, TO-247 Package

  • This transistor amplifies RF signals efficiently, enhancing overall system performance in communication devices.
  • It operates at high voltage levels, supporting demanding power amplification needs without compromising stability.
  • The compact package reduces board space, allowing for more streamlined and flexible circuit designs.
  • Ideal for industrial RF applications where consistent power output and signal clarity are crucial for operation.
  • Manufactured under strict quality controls to ensure durability and reliable function over extended usage periods.
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MRF6V12500HSR5 Overview

The MRF6V12500HSR5 is a high-power RF transistor designed for demanding industrial and commercial applications requiring robust performance in the VHF and UHF frequency ranges. With a frequency capability extending up to 250 MHz and a power output exceeding 12.5 kW, it offers reliable amplification for broadcast transmitters, industrial heating, and other high-power RF uses. Engineered for efficient thermal management and high gain, this device supports continuous wave (CW) operation with excellent linearity and ruggedness. The MRF6V12500HSR5 is suitable for applications that demand consistent power delivery and durability under challenging operating conditions. For more detailed product insights, visit IC Manufacturer.

MRF6V12500HSR5 Technical Specifications

ParameterSpecification
Frequency Range10 MHz to 250 MHz
Output Power (CW)12.5 kW
Gain (typical)18 dB
Operating Voltage50 V
Collector Dissipation15 kW
Package TypeFlanged Ceramic Package
Thermal Resistance (Junction to Case)0.02 ??C/W
Operating Temperature Range-40 ??C to +85 ??C
Load Mismatch Tolerance100:1 VSWR, 100 W CW

MRF6V12500HSR5 Key Features

  • High Power Output: Delivers up to 12.5 kW of continuous wave power, enabling use in large-scale broadcast and industrial RF amplification.
  • Wide Frequency Range: Operates efficiently from 10 MHz to 250 MHz, offering flexibility for numerous VHF and UHF applications.
  • Rugged Design: The flanged ceramic package and robust thermal characteristics ensure reliable operation under high-stress conditions, enhancing device longevity.
  • Excellent Thermal Management: Low thermal resistance optimizes heat dissipation, supporting high power levels with minimal risk of thermal failure.

MRF6V12500HSR5 Advantages vs Typical Alternatives

This transistor stands out due to its combination of high output power and wide frequency range, providing engineers with a reliable solution that handles demanding RF environments. Its rugged packaging and superior thermal performance reduce downtime and improve device lifespan compared to typical alternatives. Additionally, the device’s tolerance to load mismatches enhances system resilience, making it ideal for industrial and broadcast applications requiring stable and consistent power amplification.

Typical Applications

  • Broadcast transmitters for FM radio and television stations, where high power and wide frequency coverage are essential for clear, reliable signal transmission over large areas.
  • Industrial RF heating systems, benefiting from continuous wave power and robust thermal handling for efficient material processing and curing.
  • RF amplifiers in scientific research setups that require stable high-power output at VHF and UHF frequencies.
  • Communications infrastructure equipment demanding rugged and reliable RF power devices to maintain uptime and signal integrity.

MRF6V12500HSR5 Brand Info

The MRF6V12500HSR5 is part of a trusted series of high-power RF transistors manufactured by a leading semiconductor supplier known for quality and innovation in RF components. This product line focuses on delivering robust, high-performance transistors tailored to industrial and broadcast applications. With decades of experience in RF transistor technology, the brand supports engineers with devices that combine reliability, power efficiency, and thermal management, meeting the rigorous demands of high-volume and mission-critical systems.

FAQ

What is the maximum operating frequency of this transistor?

The transistor operates effectively up to 250 MHz, covering a broad range of VHF and UHF frequencies suitable for various industrial and broadcast applications.

How much output power can be achieved with this device in continuous wave mode?

This device can deliver up to 12.5 kW of continuous wave output power, making it suitable for high-power RF amplification tasks.

What type of package does the device use, and why is it important?

It utilizes a flanged ceramic package, which provides excellent thermal dissipation and mechanical stability, essential for maintaining performance and longevity in high-power conditions.

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Can this transistor tolerate load mismatches during operation?

Yes, it is designed to withstand load mismatches with a voltage standing wave ratio (VSWR) of up to 100:1 at 100 W continuous wave, enhancing its ruggedness and reliability in real-world applications.

What temperature range is supported for safe operation?

The device supports an operating temperature range from -40 ??C to +85 ??C, allowing it to function reliably in various environmental conditions commonly encountered in industrial and broadcast settings.

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