MRF6V12500GSR5 Overview
The MRF6V12500GSR5 is a high-power RF transistor designed for industrial and commercial applications requiring robust linear amplification. Operating efficiently in the VHF and low UHF frequency ranges, it delivers substantial output power combined with excellent gain characteristics. This transistor is optimized for demanding applications such as broadcast transmitters, high-power linear amplifiers, and industrial RF equipment. Its construction supports reliable operation under high voltage and current conditions, making it a preferred choice for engineers seeking performance and durability. For more details, visit IC Manufacturer.
MRF6V12500GSR5 Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 30 MHz to 400 MHz |
| Output Power (CW) | 1250 W |
| Gain (Typical) | 16 dB |
| Operating Voltage | 28 V (typical) |
| Collector Current | 25 A (max) |
| Gain Flatness | ??1.5 dB |
| Package Type | Hermetically Sealed Package |
| Thermal Resistance (Junction to Case) | 0.05 ??C/W |
| Impedance (Input/Output) | 50 ?? |
MRF6V12500GSR5 Key Features
- High power output capability: Delivers up to 1250 W of continuous wave power, enabling robust signal amplification for demanding RF applications.
- Wide frequency operation: Supports frequencies from 30 MHz to 400 MHz, offering flexibility for VHF and UHF applications.
- Excellent gain linearity: Provides stable 16 dB gain with ??1.5 dB flatness, ensuring consistent amplification and signal integrity.
- Durable hermetic packaging: Protects the device from environmental factors, enhancing reliability and longevity in industrial environments.
- Low thermal resistance: Efficient heat dissipation with 0.05 ??C/W junction-to-case resistance reduces thermal stress and improves operational stability.
- Robust voltage and current handling: Designed for 28 V operation and up to 25 A collector current, accommodating high power and high efficiency demands.
MRF6V12500GSR5 Advantages vs Typical Alternatives
This device stands out with its high power density and broad frequency range compared to typical RF transistors. Its hermetic package enhances reliability under harsh conditions, while the low thermal resistance supports better heat management. The combination of linear gain performance and robust voltage/current handling makes it ideal for applications requiring precise, efficient amplification and long-term operational stability.
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Typical Applications
- Broadcast transmitters: Suitable for VHF TV and FM radio transmitters needing consistent high power and linear amplification.
- Industrial RF heating: Used in equipment requiring reliable high-power RF output for material processing.
- Linear RF amplifiers: Ideal for amplifying signals in communication systems with minimal distortion across the specified frequency range.
- Military and aerospace systems: Applicable where rugged and stable high-power RF performance is critical.
MRF6V12500GSR5 Brand Info
This transistor is part of a well-established line of power RF devices recognized for quality and performance in industrial and commercial markets. The product benefits from decades of semiconductor expertise, ensuring consistent manufacturing standards and reliable supply. Its integration into demanding RF systems is supported by comprehensive datasheets and application notes, facilitating ease of design and deployment.
FAQ
What is the typical operating frequency range for this transistor?
The transistor operates effectively between 30 MHz and 400 MHz, covering VHF and low UHF bands. This range supports diverse RF applications from broadcast to industrial uses.
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How much output power can be expected from this device?
It delivers a continuous wave output power of approximately 1250 watts, making it suitable for high-power amplification needs in various RF systems.
What package type does this transistor use and why is it important?
The device is housed in a hermetically sealed package, which protects the internal semiconductor from moisture and contaminants. This packaging enhances reliability, especially in harsh or variable environmental conditions.
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How does the thermal resistance affect device performance?
With a junction-to-case thermal resistance of 0.05 ??C/W, the transistor efficiently dissipates heat, reducing the risk of thermal runaway and ensuring stable operation under high power.
Can this transistor handle high voltage and current simultaneously?
Yes, it is designed to operate at a typical voltage of 28 V and can handle a collector current up to 25 A, supporting demanding high-power applications with robust electrical characteristics.
