MRF6V12250HR5 Overview
The MRF6V12250HR5 is a high-power RF transistor designed for industrial and telecommunications applications requiring robust performance at UHF frequencies. This device delivers up to 250 watts of output power with high efficiency, making it ideal for use in linear and pulsed RF amplifiers. Engineered to withstand demanding operating conditions, it offers excellent gain, linearity, and thermal stability. Its rugged design ensures reliability in continuous wave (CW) and pulsed modes, supporting applications such as broadcast transmitters and military radios. The device is a proven solution for engineers seeking a powerful, efficient, and stable RF transistor from a trusted IC Manufacturer.
MRF6V12250HR5 Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 470?C860 MHz |
| Output Power (CW) | 250 W typical |
| Gain | 15 dB typical |
| Efficiency | 60% typical at rated power |
| Operating Voltage | 28 V DC |
| Input Power (CW) | 15 W typical |
| Package Type | Flange-mount transistor |
| Thermal Resistance (junction-to-case) | 0.15 ??C/W |
| Operating Temperature Range | -40 ??C to +85 ??C |
MRF6V12250HR5 Key Features
- High Output Power: Supports up to 250 W continuous wave power, enabling strong signal amplification for demanding RF applications.
- Wide Frequency Range: Operates efficiently across 470?C860 MHz, providing versatility for multiple UHF band uses.
- Superior Efficiency: Achieves approximately 60% efficiency at rated power, reducing heat dissipation and improving system reliability.
- Robust Thermal Characteristics: Low junction-to-case thermal resistance enhances heat dissipation, ensuring stable operation under high power conditions.
MRF6V12250HR5 Advantages vs Typical Alternatives
This transistor stands out due to its combination of high output power and efficiency within the UHF band, outperforming many alternatives with better thermal management and rugged packaging. Its reliable gain and broad frequency range provide engineers with a flexible solution that reduces system complexity and improves overall amplifier performance. The device??s flange-mount package enhances mechanical stability and heat transfer, increasing durability compared to surface-mount devices.
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Typical Applications
- Broadcast Transmitters: Ideal for UHF television and FM broadcast transmitters requiring consistent linear amplification with high power output and efficiency.
- Industrial RF Heating: Suitable for induction heating and dielectric heating systems where reliable, high-power RF amplification is essential.
- Military Communications: Used in tactical radios and communication equipment demanding ruggedness and stable operation under varying environmental conditions.
- RF Test Equipment: Supports high-power signal generation and amplification in automated test setups and RF analyzers.
MRF6V12250HR5 Brand Info
The MRF6V12250HR5 is part of a well-established line of RF power transistors known for durability and high performance in industrial and communication sectors. Developed by a leading IC manufacturer specializing in high-frequency semiconductor devices, this product emphasizes quality and reliability. The brand ensures extensive testing and qualification to meet rigorous standards, making this transistor a preferred choice for engineers designing high-power RF amplification systems.
FAQ
What frequency band does the MRF6V12250HR5 cover?
This device operates effectively across the 470 to 860 MHz frequency range, making it suitable for UHF band applications such as television broadcasting and industrial RF systems.
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What is the maximum output power rating for this transistor?
The transistor delivers a maximum continuous wave output power of 250 watts, providing strong amplification capability for high-power RF applications.
How does the thermal resistance affect device performance?
With a low junction-to-case thermal resistance of 0.15 ??C/W, the device efficiently transfers heat away from the junction, which helps maintain stable operation and prolongs device life under high power conditions.
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Is the transistor suitable for pulsed as well as continuous wave operation?
Yes, the MRF6V12250HR5 is designed to perform reliably in both continuous wave and pulsed modes, making it versatile for various RF amplification scenarios.
What package type does this transistor use, and why is it important?
The transistor features a flange-mount package, which provides enhanced mechanical stability and improved thermal conduction. This packaging type facilitates easier mounting on heat sinks and supports robust, long-term operation in demanding environments.
