MRF300AN-27MHZ Overview
The MRF300AN-27MHZ is a high-performance RF power transistor designed for applications requiring reliable and efficient amplification in the 27 MHz frequency band. Its robust construction and optimized design enable excellent power gain and linearity, making it suitable for industrial, communication, and broadcast environments. With a focus on delivering consistent output power and thermal stability, this transistor supports engineers in developing durable and high-efficiency RF systems. For more detailed product and sourcing information, visit IC Manufacturer.
MRF300AN-27MHZ Technical Specifications
| Parameter | Specification |
|---|---|
| Operating Frequency | 27 MHz |
| Output Power (POUT) | 300 Watts (CW) |
| Gain | Typically 13 dB |
| Drain Supply Voltage (VDD) | 28 V |
| Drain Current (ID) | 15 A (typical) |
| Package Type | Flanged metal package with threaded terminals |
| Thermal Resistance (Junction-to-Case) | 0.5 ??C/W |
| Input/Output Impedance | 50 ?? |
| Class of Operation | Class AB |
MRF300AN-27MHZ Key Features
- High Power Handling: Capable of delivering up to 300 Watts continuous wave output power, allowing for strong signal amplification in demanding RF power applications.
- Optimized for 27 MHz Operation: Specifically designed to operate efficiently at 27 MHz, which ensures excellent linearity and gain performance in the HF band.
- Robust Thermal Management: Low thermal resistance (0.5 ??C/W junction-to-case) and a durable metal package provide superior heat dissipation, enhancing reliability under continuous operation.
- Standard 50 ?? Impedance Matching: Facilitates easy integration with common RF system components, reducing design complexity and improving overall efficiency.
MRF300AN-27MHZ Advantages vs Typical Alternatives
This transistor offers a combination of high output power, stable gain, and robust thermal performance that surpass many typical RF power transistors at 27 MHz. Its metal flange package ensures enhanced heat dissipation compared to plastic-encapsulated alternatives, improving device longevity and reliability. Additionally, the 50 ?? impedance compatibility simplifies system design and reduces insertion losses, making it a preferred choice for engineers seeking efficient, dependable amplification solutions within the HF frequency range.
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Typical Applications
- Industrial RF heating and plasma generation systems that require continuous high power output and reliability at 27 MHz frequency.
- Amateur radio transmitters operating in the HF band, benefiting from the device??s linearity and power gain characteristics.
- Broadcast transmitters and communication base stations where consistent signal amplification ensures signal integrity.
- Scientific instrumentation and test equipment requiring stable RF power amplification at fixed frequencies around 27 MHz.
MRF300AN-27MHZ Brand Info
Manufactured by a reputable semiconductor supplier, this transistor belongs to a line of power RF devices engineered for industrial and communication applications. Known for their quality and performance, these products are tailored to meet stringent requirements in RF amplification with proven reliability and ease of integration. The product??s construction and specifications reflect a commitment to delivering dependable components that support critical RF power stages in demanding environments.
FAQ
What is the maximum output power capability of this RF transistor?
The device is rated for a maximum continuous output power of 300 Watts at 27 MHz, making it suitable for high-power RF amplification tasks. This rating ensures robust performance in both industrial and communication applications where consistent power delivery is essential.
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What type of package does this transistor use and why is it important?
This transistor is housed in a flanged metal package with threaded terminals, which provides excellent thermal conductivity. The metal flange allows efficient heat dissipation, reducing thermal resistance and enhancing the device??s reliability during continuous high-power operation.
Can this transistor be used in broadband amplification applications?
The transistor is optimized for operation at 27 MHz and features a 50 ?? input/output impedance. While primarily designed for fixed-frequency applications, it may be used in narrowband systems around this frequency, but is not intended for wideband amplification across a broad frequency range.
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What are the typical operating voltage and current conditions for this power transistor?
The recommended drain supply voltage is 28 V, with a typical drain current of 15 A during operation. These parameters ensure optimal performance and power output while maintaining device stability and longevity.
How does the device??s thermal resistance affect its performance?
With a thermal resistance of 0.5 ??C/W from junction to case, the transistor effectively dissipates heat generated during amplification. This low thermal resistance helps prevent overheating, reducing the risk of thermal runaway and contributing to enhanced operational reliability under continuous load conditions.
