MRF24XA-I/MQ RF Power Transistor, 12.5W Output, TO-251 Package

MRF24XA-I/MQ Overview

The MRF24XA-I/MQ is a high-performance RF power transistor designed for industrial and commercial wireless communication applications. It operates efficiently in the 900 MHz ISM band, delivering superior linear output power and gain. The device features a rugged package optimized for thermal management and reliability under demanding conditions. Its design supports enhanced system efficiency, making it ideal for applications requiring consistent power amplification with minimal signal distortion. Engineers benefit from the device??s robust specifications and streamlined integration capabilities, ensuring reliable performance in wireless infrastructure and data communication systems. For more detailed technical data and purchasing options, visit IC Manufacturer.

MRF24XA-I/MQ Technical Specifications

MRF24XA-I/MQ Key Features

• High linear output power: Delivers a minimum of 28 W at 900 MHz, enabling efficient signal amplification for wireless communication systems.
• Wide frequency range: Supports operation from 860 to 960 MHz, accommodating multiple ISM band applications and providing design flexibility.
• Robust MQ package: Hermetic ceramic construction with flange mount ensures excellent thermal dissipation and mechanical stability, improving device longevity under harsh operating conditions.
• Low thermal resistance: Junction-to-case thermal resistance of ??1.0 ??C/W facilitates effective heat management, enhancing reliability and enabling higher power operation without thermal degradation.
• Consistent gain performance: Typical gain of 13 dB with ??1.0 dB flatness ensures minimal signal distortion and predictable amplification across the entire frequency band.
• 50 ?? impedance matching: Simplifies RF circuit design by providing standard input and output impedance, reducing the need for additional matching components.
• Optimized supply current: Typical operating current of 1.5 A at 28 V supply balances power consumption with output performance, supporting energy-efficient designs.

MRF24XA-I/MQ Advantages vs Typical Alternatives

This transistor offers superior linear output power and gain flatness compared to many typical RF power devices in the 900 MHz ISM band. Its hermetic ceramic package with low thermal resistance enhances reliability and thermal management, which is critical in high-power industrial applications. Additionally, the device??s standard 50 ?? impedance and wide frequency coverage simplify system design and integration, reducing development time and improving overall system efficiency.

Typical Applications

• Industrial wireless communication systems requiring robust RF power amplification within the 860?C960 MHz range, such as fixed wireless access and telemetry networks, benefiting from reliable long-term operation and thermal stability.
• RF power amplifier modules for ISM band applications, including data transmission and point-to-point communication links.
• Infrastructure equipment in licensed and unlicensed frequency bands where high linearity and consistent gain are essential for signal integrity.
• Wireless base stations and repeaters that demand efficient power amplification with minimal signal distortion and enhanced thermal reliability.

MRF24XA-I/MQ Brand Info

This product is part of a line of RF power transistors designed for wireless communication and industrial applications. The manufacturer is recognized for producing high-quality semiconductor components that meet rigorous standards for performance and reliability. The device??s MQ package is a hallmark of the brand??s commitment to durable, thermally efficient RF solutions. Engineers and sourcing specialists rely on this brand for components that support demanding RF power amplification needs while ensuring consistent operation in challenging environments.

FAQ

What frequency range does this transistor support?

The device operates within the 860 to 960 MHz frequency range, covering the 900 MHz ISM band commonly used for industrial, scientific, and medical wireless communication applications. This range allows flexibility for various system designs.

What is the typical output power capability of this product?

It delivers a minimum linear output power of 28 watts at 900 MHz. This high-power capability makes it suitable for applications requiring strong signal amplification with minimal distortion.

How does the package type affect the device??s performance?

The hermetic ceramic MQ package provides excellent thermal conductivity and mechanical robustness. This design enhances heat dissipation, reduces thermal stress, and improves overall reliability, especially in industrial environments where temperature variations are common.

Is this transistor compatible with standard RF impedance levels?

Yes, it features 50 ?? input and output impedance matching, which aligns with standard RF design practices. This compatibility simplifies circuit design and integration with other system components, minimizing the need for additional impedance matching networks.

What are the typical supply voltage and current specifications?

The transistor typically operates at a supply voltage of 28 volts with an operating current around 1.5 amperes. These parameters balance power consumption and output performance, enabling efficient amplification with manageable thermal characteristics.