MRF1K50NR5 Overview
The MRF1K50NR5 is a high-power RF transistor designed for industrial and commercial amplifier applications requiring robust performance at VHF and UHF frequencies. This device delivers up to 1 kW of output power with high efficiency, making it suitable for demanding RF power amplification tasks. Its rugged construction and superior thermal management enable reliable operation under continuous and pulsed modes. Engineered to optimize gain and linearity, it supports enhanced system performance in communication and broadcasting equipment. For detailed technical support and sourcing, visit IC Manufacturer.
MRF1K50NR5 Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 225 ?C 400 MHz |
| Output Power (CW) | 1000 W (1 kW) |
| Gain | ?? 12 dB |
| Collector-Emitter Voltage (VCE) | 65 V |
| Collector Current (IC) | 25 A max |
| Thermal Resistance, Junction-to-Case | 0.25 ??C/W |
| Package Type | Flange-Mount Transistor |
| Operating Temperature | -55 ??C to +225 ??C junction |
| DC Power Gain | ?? 12 dB typical |
MRF1K50NR5 Key Features
- High Power Output: Capable of delivering 1 kW of continuous wave power, supporting high-performance RF amplifiers in industrial applications.
- Wide Frequency Range: Operates effectively from 225 to 400 MHz, covering essential VHF/UHF bands used in communication and broadcasting.
- Robust Thermal Management: Low thermal resistance ensures efficient heat dissipation, enhancing reliability during long-term operation.
- Durable Package Design: The flange-mount package provides mechanical stability and facilitates easy integration into heat sinks for improved thermal control.
MRF1K50NR5 Advantages vs Typical Alternatives
This transistor offers a superior combination of power output and thermal performance compared to typical RF power transistors in its class. Its ability to maintain high gain and efficiency at elevated temperatures ensures more reliable, consistent amplification. The robust flange-mount package design aids in heat dissipation, reducing failure rates and simplifying system integration. These advantages make it a preferred choice for engineers seeking dependable, high-power RF solutions.
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Typical Applications
- Industrial RF power amplifiers for broadcast transmitters, supporting high output power and stable operation in VHF and UHF frequency bands.
- Commercial communication base stations requiring efficient and linear RF amplification for reliable signal transmission.
- Military and aerospace RF systems where ruggedness and thermal stability under harsh conditions are critical.
- Test and measurement equipment involving high-power RF signals for accurate and repeatable results.
MRF1K50NR5 Brand Info
This transistor is part of a specialized portfolio designed by a leading semiconductor manufacturer focused on high-power RF solutions. Known for stringent quality control and rigorous testing, the brand ensures that each device meets exacting performance standards. The product is engineered for demanding RF applications, combining advanced semiconductor technology with proven reliability to support critical industrial and commercial systems worldwide.
FAQ
What is the typical operating frequency range of this RF transistor?
The device operates effectively within the 225 MHz to 400 MHz frequency band, making it suitable for VHF and lower UHF applications commonly found in communication and broadcasting equipment.
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What output power can be expected under continuous wave conditions?
It delivers up to 1000 watts (1 kW) of continuous wave output power, enabling high-power amplification with good efficiency for various industrial RF applications.
How does the package design contribute to device reliability?
The flange-mount package provides excellent mechanical stability and facilitates efficient heat dissipation by allowing easy attachment to heat sinks. This thermal management contributes significantly to reliable operation under high-power and high-temperature conditions.
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What are the maximum voltage and current ratings for this transistor?
The maximum collector-emitter voltage rating is 65 volts, and the maximum collector current rating is 25 amperes. These parameters ensure the device can handle substantial power levels safely within its operating limits.
Can this transistor be used in pulsed as well as continuous wave applications?
Yes, the device is designed to support both continuous wave and pulsed operation modes, making it versatile for various amplifier designs requiring different signal types and duty cycles.
