MRF1K50HR5 Overview
The MRF1K50HR5 is a high-power RF transistor designed for industrial and commercial applications requiring robust linear amplification. It operates at frequencies up to 512 MHz with a power output of 1.5 kW, making it ideal for high-efficiency RF power stages. This device features a rugged, metal-flanged package to ensure excellent thermal management and reliable operation under demanding conditions. Its construction supports continuous wave (CW) and pulsed operation, catering to various amplification needs. Designed with proven semiconductor technology, it delivers consistent performance and durability. For more detailed technical resources and support, visit IC Manufacturer.
MRF1K50HR5 Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 380 ?C 512 MHz |
| Output Power (CW) | 1500 W (1.5 kW) |
| Gain | Typically 14 dB |
| Efficiency | Up to 70% |
| Operating Voltage | 28 V DC |
| Package Type | Hermetically sealed metal flange |
| Input Impedance | 50 ?? |
| Output Impedance | 50 ?? |
| Thermal Resistance (junction to case) | 0.15 ??C/W |
| Bias Conditions | Class AB operation |
MRF1K50HR5 Key Features
- High Power Handling: Delivers up to 1.5 kW output power, enabling robust signal amplification in demanding RF applications.
- Wide Frequency Range: Covers 380 to 512 MHz, providing flexibility for various communication and broadcasting bands.
- Excellent Thermal Management: The hermetically sealed metal flange package offers superior heat dissipation for enhanced reliability and longer device lifespan.
- High Efficiency: Achieves up to 70% efficiency, reducing power losses and improving overall system performance.
- Stable Operation: Designed for Class AB biasing, ensuring linear amplification with low distortion and high signal integrity.
MRF1K50HR5 Advantages vs Typical Alternatives
This RF transistor stands out with its combination of high power output and efficiency, coupled with robust thermal design. Compared to typical alternatives, it offers improved linearity and reliability, ensuring consistent performance in high-demand RF power amplifier stages. Its wide frequency range and 50 ?? impedance matching simplify integration into existing systems, providing engineers with a dependable solution that balances power, efficiency, and durability.
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Typical Applications
- RF Power Amplifiers for broadcasting and communication infrastructure, where reliable high-power linear amplification is critical to maintaining signal quality and coverage.
- Industrial RF heating and plasma generation systems requiring stable, high-power RF output for process control.
- Military and aerospace communication equipment needing rugged and efficient RF transistor solutions for demanding environments.
- Test and measurement instrumentation where precision RF amplification supports accurate signal analysis.
MRF1K50HR5 Brand Info
This transistor is manufactured under a leading semiconductor brand known for high-performance RF power devices. The product line emphasizes durability, thermal robustness, and high efficiency in power amplification applications. Designed with stringent manufacturing standards, the device supports long-term reliability, making it a preferred choice for engineers developing industrial and commercial RF systems. Comprehensive technical support and detailed datasheets are available to assist design and sourcing specialists.
FAQ
What frequency range does this device support?
The device operates effectively across a frequency range of 380 to 512 MHz, making it suitable for applications in VHF and low UHF bands commonly used in communication and broadcasting.
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What is the maximum output power capability?
The transistor delivers a continuous wave output power of up to 1.5 kW, providing a robust power level for high-demand RF amplification tasks.
What packaging does the device use, and why is it important?
It features a hermetically sealed metal flange package that ensures excellent thermal conductivity and environmental protection. This packaging improves heat dissipation and enhances device reliability in harsh operating conditions.
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Can it be used in pulsed RF applications?
Yes, the device supports both continuous wave (CW) and pulsed operations, offering versatility for a wide variety of RF power amplification scenarios, including industrial and communications systems.
What type of biasing is recommended for optimal performance?
Class AB biasing is recommended for this transistor to achieve a balance between linearity and efficiency, ensuring low distortion and stable amplification in RF power stages.
