MRF13750HSR5 Overview
The MRF13750HSR5 is a high-power LDMOS RF transistor designed for broadband applications in the 470 MHz to 860 MHz frequency range. It delivers up to 1500 watts of output power, making it ideal for use in broadcast transmitters, industrial heating, and other demanding RF systems. With its rugged construction and high efficiency, this device ensures reliable performance in continuous wave (CW) and pulsed modes. The transistor features excellent gain and linearity, supporting robust amplification with low distortion. Engineers and sourcing specialists will find this solution well-suited for high-power amplification needs within the VHF and UHF spectrum. For further details, visit IC Manufacturer.
MRF13750HSR5 Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Operating Frequency Range | 470 ?C 860 | MHz |
| Output Power (CW) | 1500 | Watts |
| Gain (Typical) | 14 | dB |
| Drain Efficiency (Typical) | 55 | % |
| Drain Voltage | 50 | Volts |
| Load Mismatch Capability | 3:1 VSWR | Ratio |
| Package Type | Flanged Package | ?C |
| Thermal Resistance (Junction to Case) | 0.12 | ??C/W |
MRF13750HSR5 Key Features
- Broadband operation from 470 MHz to 860 MHz: Enables flexible use across various VHF and UHF communication channels, reducing the need for multiple transistors.
- High output power of 1500 W: Supports demanding high-power RF amplification tasks, ensuring strong signal transmission and coverage.
- Superior gain of approximately 14 dB: Enhances signal strength while maintaining linearity, which is critical for broadcast and industrial applications.
- Robust load mismatch tolerance up to 3:1 VSWR: Provides increased reliability under challenging load conditions, protecting the device from damage and system downtime.
- Low thermal resistance: Facilitates efficient heat dissipation, improving reliability and extending device lifespan in high-power environments.
MRF13750HSR5 Advantages vs Typical Alternatives
This device offers a combination of high output power, wide frequency coverage, and strong load mismatch tolerance that is often superior to standard LDMOS transistors in its class. Its efficient thermal management and robust construction ensure reliable operation under continuous and pulsed conditions. Compared to typical alternatives, it delivers better gain and power efficiency, making it a preferred choice for designers aiming to optimize performance and reduce system complexity in VHF/UHF power amplification.
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Typical Applications
- Broadcast transmitters for television and radio stations operating within the 470?C860 MHz band, where high linearity and power are essential for signal integrity and coverage.
- Industrial RF heating systems requiring consistent high-power output and rugged components for reliable operation in harsh environments.
- RF base stations and repeaters that demand broadband operation and robust power handling for enhanced communication range and quality.
- Military and commercial radar systems that benefit from the transistor??s high gain and durability under continuous wave and pulsed conditions.
MRF13750HSR5 Brand Info
The MRF13750HSR5 is part of a well-established series of LDMOS RF power transistors known for their ruggedness and efficiency in high-power applications. Manufactured by a leading semiconductor company, this device embodies the brand??s commitment to delivering reliable, high-performance components for industrial and broadcast RF amplification. Its design reflects decades of expertise in optimizing LDMOS technology to meet demanding industry standards for power, gain, and durability.
FAQ
What frequency range does this transistor support?
The transistor operates effectively across a broadband frequency range from 470 MHz to 860 MHz. This makes it suitable for a wide variety of VHF and UHF applications, providing versatility for different communication and industrial systems.
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What is the maximum output power rating?
It can deliver up to 1500 watts of continuous wave output power, supporting high-power amplification needs in both commercial and industrial RF applications, which require robust and consistent performance.
How does the device handle load mismatches?
This transistor is designed to tolerate load mismatches up to a 3:1 Voltage Standing Wave Ratio (VSWR), enhancing system reliability and protecting the device from damage caused by impedance variations in real-world environments.
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What packaging does the transistor use?
The device comes in a flanged package that facilitates efficient heat dissipation and allows for secure mounting in high-power amplifier assemblies, which is essential for maintaining operational stability under heavy loads.
Is this transistor suitable for pulsed operation?
Yes, the transistor supports both continuous wave and pulsed operation modes, making it versatile for applications such as radar and industrial RF heating, where pulsed power output is often required.
