MRF13750HR5 Overview
The MRF13750HR5 is a high-power RF transistor designed for demanding industrial and communication applications requiring robust performance at UHF frequencies. This device delivers up to 120 watts of output power with excellent linearity and efficiency, making it ideal for signal amplification in base stations, transmitters, and other high-frequency circuits. Built with advanced silicon laterally diffused metal-oxide semiconductor (LDMOS) technology, it ensures reliable operation under rigorous conditions. Its rugged construction and thermal management capabilities provide enhanced durability, supporting long-term stability in critical RF environments. For more details, visit IC Manufacturer.
MRF13750HR5 Technical Specifications
| Parameter | Specification |
|---|---|
| Operating Frequency Range | 470 MHz ?C 860 MHz |
| Output Power (P3 dB) | 120 W (typical) |
| Gain (Typ) | 15 dB |
| Efficiency (Class AB Operation) | 50% |
| Supply Voltage | 28 V |
| Input/Output Impedance | 50 ?? |
| Package Type | Hermetically Sealed Metal Can |
| Thermal Resistance (Junction to Case) | 0.5 ??C/W |
| Operating Temperature Range | -30 ??C to +85 ??C |
MRF13750HR5 Key Features
- High Output Power: Delivers up to 120 W, enabling strong signal transmission for demanding RF applications.
- Wide Frequency Bandwidth: Operates effectively across 470 MHz to 860 MHz, providing flexibility for various UHF communication systems.
- Excellent Gain and Efficiency: Offers 15 dB gain with 50% efficiency, ensuring optimal power amplification with reduced energy waste.
- Robust Thermal Management: Low thermal resistance and hermetically sealed metal package enhance reliability and longevity under high-power conditions.
MRF13750HR5 Advantages vs Typical Alternatives
This transistor provides superior power output and thermal stability compared to typical RF transistors in the same class. Its broad frequency range and high gain simplify system design by reducing the need for additional amplification stages. The efficient power conversion minimizes heat generation, improving long-term reliability and reducing cooling requirements. These advantages translate into a more compact, reliable, and cost-effective solution for RF power amplification.
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Typical Applications
- Base station transmitters for cellular networks, where high linearity and power output are critical to maintaining signal integrity and coverage.
- UHF radio communication systems requiring consistent power amplification across a broad frequency range.
- Industrial RF equipment, including broadcast transmitters and signal repeaters, benefiting from high efficiency and thermal robustness.
- Military and aerospace communication devices demanding rugged components capable of stable operation under harsh environmental conditions.
MRF13750HR5 Brand Info
The product is a well-established RF power transistor designed for high-performance communication and industrial applications. Manufactured with industry-proven silicon LDMOS technology, it reflects the brand??s commitment to quality, reliability, and innovation in semiconductor solutions. Known for delivering consistent performance under demanding electrical and thermal conditions, this device is part of a comprehensive portfolio aimed at providing engineers with durable, efficient, and high-output RF components.
FAQ
What is the maximum output power rating of this RF transistor?
The maximum output power rating is typically 120 watts at the 3 dB compression point, indicating it can deliver strong, linear amplification within its specified frequency range.
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Which frequency range does this device support?
This transistor operates effectively across the UHF band from 470 MHz to 860 MHz, making it suitable for a wide variety of applications in cellular, broadcast, and industrial RF systems.
How does the package design influence performance?
The hermetically sealed metal can package offers excellent thermal conductivity and environmental protection, enhancing the transistor??s reliability and enabling stable operation at high power and temperature levels.
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What is the typical gain provided by this transistor?
The device provides a typical gain of 15 dB, which helps reduce the need for multiple amplification stages, simplifying circuit design and improving overall system efficiency.
Can this transistor be used in harsh environmental conditions?
Yes, it is rated for operation in temperatures ranging from -30 ??C to +85 ??C and is designed with rugged construction to withstand challenging industrial and communication environments.
