MRF101BN Overview
The MRF101BN is a high-performance NPN silicon RF transistor specifically designed for low-noise amplification in VHF and UHF frequency ranges. Engineered to deliver excellent gain and low noise figure, this transistor is ideal for sensitive receiver front-end applications. Its robust construction and reliable performance make it suitable for demanding industrial and communication systems. Provided by a trusted IC Manufacturer, this device supports engineers and sourcing specialists seeking precise, high-frequency amplification solutions with consistent quality and proven durability.
MRF101BN Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | NPN Silicon RF Transistor |
| Frequency Range | 30 MHz to 150 MHz |
| Collector-Emitter Voltage (VCEO) | 12 V |
| Collector Current (IC) | 30 mA (typical) |
| Gain (hFE) at 100 MHz | 50 (minimum) |
| Noise Figure | Approximately 3 dB |
| Power Dissipation (PD) | 310 mW maximum |
| Package | TO-18 metal can |
MRF101BN Key Features
- Low noise figure: Ensures minimal signal degradation, improving receiver sensitivity in communication systems.
- High gain at VHF/UHF frequencies: Provides effective amplification, enhancing signal strength without excessive power consumption.
- Robust metal can package: Offers excellent thermal stability and mechanical protection for reliable operation under varying environmental conditions.
- Optimized for low collector current: Supports efficient power usage while maintaining performance, suitable for battery-powered or low-power designs.
MRF101BN Advantages vs Typical Alternatives
Compared to typical RF transistors in the same class, this device delivers superior low-noise performance and gain at VHF frequencies, which is critical for sensitive front-end amplification. Its low power dissipation and compact metal package enhance reliability and thermal management, making it a more durable and efficient choice for high-frequency amplification than many general-purpose alternatives.
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Typical Applications
- Low-noise amplifier stages in VHF and UHF communication receivers, where signal clarity and sensitivity are paramount for effective data transmission and reception.
- RF front-end amplification in industrial monitoring equipment, enabling accurate signal processing in noisy environments.
- Test and measurement instrumentation requiring stable, low-noise RF amplification to ensure precise readings and diagnostics.
- Broadcast and amateur radio equipment, supporting clear signal amplification across designated frequency bands.
MRF101BN Brand Info
This transistor is part of a well-established semiconductor portfolio known for quality and reliability in RF applications. Manufactured under stringent quality controls, it reflects the brand??s commitment to supporting engineers with dependable components designed for critical signal amplification tasks. The device complements a broad range of RF products tailored to industrial, communication, and instrumentation markets, ensuring consistent performance and longevity.
FAQ
What frequency range does this transistor support?
This transistor is designed to operate efficiently within the VHF spectrum, covering frequencies approximately from 30 MHz up to 150 MHz, making it suitable for various communication and industrial applications requiring high-frequency amplification.
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What is the typical noise figure of this device?
The noise figure is approximately 3 dB, which indicates low noise generation during amplification. This characteristic is crucial for maintaining signal integrity in sensitive receiver front-end applications.
What package type is used for this transistor, and why does it matter?
The transistor comes in a TO-18 metal can package. This packaging provides enhanced thermal dissipation and mechanical protection, contributing to improved reliability and stable operation under diverse environmental conditions.
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What are the typical operating voltages and currents for this transistor?
The collector-emitter voltage rating is 12 V, and the typical collector current is around 30 mA. These parameters support low-power operation while delivering sufficient gain for RF amplification tasks.
How does this transistor compare to other RF transistors in terms of power dissipation?
With a maximum power dissipation of 310 mW, it operates efficiently within its specified limits, offering a good balance between power handling and thermal management compared to many similar devices designed for VHF applications.
