MNS2N3501P-Transistor-PIND Overview
The MNS2N3501P-Transistor-PIND is a high-performance bipolar junction transistor (BJT) designed primarily for phototransistor and photoinduced diode (PIND) applications. Featuring a PNP configuration, it offers reliable switching and amplification capabilities essential in optical sensing circuits. This transistor excels in handling moderate voltage and current levels, making it suitable for industrial and consumer electronic devices requiring precise signal detection. Its compact package and stable electrical characteristics ensure seamless integration into complex systems, delivering consistent performance. For more detailed technical resources, visit IC Manufacturer.
MNS2N3501P-Transistor-PIND Key Features
- PNP Bipolar Junction Transistor: Enables efficient current amplification with reliable switching performance in phototransistor circuits.
- High Current Gain (hFE): Provides enhanced signal amplification, improving sensitivity in optical detection applications.
- Moderate Collector-Emitter Voltage Rating: Supports stable operation under typical industrial voltage conditions, increasing device reliability.
- Low Saturation Voltage: Reduces power loss and heat dissipation, contributing to greater energy efficiency in system design.
MNS2N3501P-Transistor-PIND Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type | PNP Bipolar Junction Transistor | ?C |
| Collector-Emitter Voltage (Vce) | 40 | V |
| Collector Current (Ic) | 0.1 | A |
| Gain Bandwidth Product (fT) | 80 | MHz |
| DC Current Gain (hFE) | 100?C300 | ?C |
| Collector-Base Voltage (Vcb) | 50 | V |
| Emitter-Base Voltage (Veb) | 5 | V |
| Power Dissipation (Pd) | 400 | mW |
| Operating Temperature Range | -55 to +150 | ??C |
MNS2N3501P-Transistor-PIND Advantages vs Typical Alternatives
This transistor offers superior current gain and voltage handling compared to many standard PNP BJTs in its class, enhancing signal accuracy and sensitivity in phototransistor applications. Its low saturation voltage minimizes power consumption, improving overall system efficiency. The device??s stable operation across a wide temperature range ensures reliability in demanding industrial environments, making it a preferred choice over typical alternatives for precise optical sensing and switching tasks.
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Typical Applications
- Optical sensor circuits including phototransistors and PIND sensors, where precise detection and signal amplification of light signals are essential for device functionality.
- Switching elements in industrial control systems requiring reliable low-power transistor operation.
- Amplification stages in audio and signal processing circuits that benefit from stable gain and low distortion.
- Consumer electronics such as remote control receivers and light detection modules requiring compact, efficient transistor solutions.
MNS2N3501P-Transistor-PIND Brand Info
The MNS2N3501P-Transistor-PIND is produced under rigorous quality controls to meet the demanding standards of industrial semiconductor devices. Engineered for robustness and precision, this transistor is part of a product line dedicated to phototransistor and PIND sensor applications. It combines proven semiconductor manufacturing techniques with modern design parameters to deliver consistent performance and reliability. This product is widely recognized for its balance of electrical characteristics and durability, ensuring long-term operational stability in various electronic systems.
FAQ
What type of transistor is the MNS2N3501P-Transistor-PIND?
It is a PNP bipolar junction transistor specifically designed for photoinduced diode (PIND) and phototransistor applications, providing efficient current amplification and switching capabilities.
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What are the key voltage ratings for this transistor?
The device supports a collector-emitter voltage of up to 40 V, a collector-base voltage of 50 V, and an emitter-base voltage of 5 V, enabling stable operation within typical industrial voltage ranges.
What is the typical current gain (hFE) range for this transistor?
The DC current gain varies between 100 and 300, which enhances its ability to amplify weak optical signals efficiently in detection circuits.
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Can this transistor operate in high-temperature environments?
Yes, it is rated for operation across a temperature range from -55??C to +150??C, making it suitable for demanding industrial and outdoor applications.
What applications are best suited for the MNS2N3501P-Transistor-PIND?
This transistor is ideal for use in optical sensors, phototransistor circuits, switching elements in control systems, and consumer electronics requiring reliable, low-power amplification and switching functions.
