MNS2N3501-Transistor Overview
The MNS2N3501 is a high-performance PNP bipolar junction transistor designed for general-purpose amplification and switching applications. With a collector current rating of up to 800mA and a maximum collector-emitter voltage of 40V, this transistor offers robust performance in a compact TO-92 package. Its balance of voltage, current handling, and gain characteristics make it suitable for industrial control circuits, signal amplification, and low-power switching tasks. Engineers and sourcing specialists will appreciate its reliable operation across a wide temperature range and compatibility with standard circuit designs. For detailed technical data and procurement options, visit IC Manufacturer.
MNS2N3501-Transistor Key Features
- High Collector Current Capacity: Supports up to 800mA, enabling efficient switching and amplification in medium power applications.
- Wide Voltage Rating: Collector-emitter voltage max of 40V allows operation in varied industrial environments without risk of breakdown.
- Moderate Gain (hFE) Range: Gain values between 40 and 250 ensure flexible use in signal amplification and driver circuits.
- Thermal Stability: Operational across a temperature range of -55??C to +150??C, ensuring reliability in harsh conditions.
- Compact TO-92 Package: Facilitates easy PCB integration and space-saving design in tight industrial layouts.
- Low Saturation Voltage: Improves efficiency by minimizing power loss during switching.
- Standard Pin Configuration: Simplifies replacement and design adaptation in existing circuits.
MNS2N3501-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | PNP Bipolar Junction |
| Collector-Emitter Voltage (Vce) | 40 V (max) |
| Collector Current (Ic) | 800 mA (max) |
| Gain Bandwidth Product (fT) | 100 MHz (typical) |
| DC Current Gain (hFE) | 40 to 250 |
| Power Dissipation (Ptot) | 625 mW (max) |
| Junction Temperature (Tj) | -55??C to +150??C |
| Package Type | TO-92 |
| Saturation Voltage (VCEsat) | 0.5 V (max at Ic=500mA) |
MNS2N3501-Transistor Advantages vs Typical Alternatives
This transistor offers a strong balance of collector current and voltage ratings that surpass many standard small-signal PNP transistors, providing enhanced reliability and efficiency in medium power applications. Its low saturation voltage reduces switching losses, improving overall circuit efficiency. The wide operating temperature range ensures consistent performance in industrial environments, making it a preferred choice over lower-rated alternatives that may compromise durability or require additional cooling.
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Typical Applications
- Signal amplification in audio and low-frequency circuits where moderate gain and power handling are required, ensuring clear and reliable output in industrial control panels.
- Switching applications in relay drivers and low-power motor control circuits where robust current capacity and fast switching are advantageous.
- General-purpose amplification within sensor interface circuits, aiding in precise signal conditioning and processing.
- Complementary transistor stages in amplifier designs to improve linearity and power efficiency in compact industrial electronics.
MNS2N3501-Transistor Brand Info
The MNS2N3501 transistor is manufactured and distributed by a reputable semiconductor supplier specializing in discrete components for industrial electronics. This product line emphasizes quality and reliability, ensuring that each transistor undergoes rigorous testing to meet stringent performance standards. Designed with industry needs in mind, the transistor supports a wide range of applications from control systems to communication devices, backed by comprehensive datasheet support and global availability.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current rating is 800mA, which allows the transistor to handle moderate power loads in switching and amplification circuits without risk of damage under specified conditions.
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Can this transistor operate reliably in high-temperature environments?
Yes, the transistor is rated for operation from -55??C to +150??C junction temperature, making it suitable for industrial environments where temperature extremes are common.
What package type does this transistor come in?
It is housed in a standard TO-92 package, which is widely used for its compact size and ease of integration into printed circuit boards.
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Is this transistor suitable for high-frequency applications?
With a typical gain bandwidth product of 100 MHz, this transistor is suitable for low to moderate frequency applications but may not be ideal for very high-frequency RF circuits.
What is the typical DC current gain (hFE) range for this transistor?
The DC current gain ranges from 40 to 250, providing flexibility in circuit design for amplification purposes depending on the operating point and load conditions.
