MNS2N2907AUB/TR Overview
The MNS2N2907AUB/TR is a high-performance bipolar junction transistor (BJT) designed for robust switching and amplification applications in industrial electronics. Featuring a PNP configuration, it offers reliable current handling and voltage tolerance suitable for medium-power circuits. Its construction ensures stable operation with a maximum collector current rating optimal for diverse control and signal processing tasks. The device is supplied in a surface-mount package, enhancing integration into compact circuit boards and improving thermal performance. Engineers and sourcing specialists will appreciate its consistent electrical characteristics and availability through IC Manufacturer, facilitating streamlined procurement and design implementation.
MNS2N2907AUB/TR Key Features
- High Collector Current Capability: Supports up to 600mA, enabling efficient handling of medium-power loads in switching and amplification roles.
- PNP Bipolar Junction Transistor Structure: Provides reliable signal amplification with complementary switching performance in analog and digital circuits.
- Surface-Mount Package Format: Enhances PCB layout flexibility and thermal dissipation for compact industrial designs.
- Moderate Voltage Ratings: Collector-emitter voltage of 40V ensures compatibility with a wide range of control voltages and power supply levels.
MNS2N2907AUB/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | ?? |
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector-Base Voltage (VCBO) | 60 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 600 | mA |
| Power Dissipation (Ptot) | 625 | mW |
| DC Current Gain (hFE) | 100?C300 | ?? |
| Transition Frequency (fT) | 100 | MHz |
| Package Type | SOT-23 | ?? |
MNS2N2907AUB/TR Advantages vs Typical Alternatives
This transistor stands out by combining a moderate voltage rating with a robust collector current capacity, making it well-suited for industrial switching needs. Its low power dissipation and high current gain contribute to efficient operation, reducing heat generation and improving reliability compared to typical PNP BJTs. The surface-mount SOT-23 package enables compact, automated assembly, providing integration advantages over through-hole alternatives while maintaining electrical performance.
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Typical Applications
- Signal amplification in industrial sensor interfaces where reliable current gain and switching are required for accurate data processing and control.
- General-purpose switching in low- to medium-power DC loads, including relay driving and LED switching circuits.
- Complementary transistor pairs in push-pull amplifier stages, supporting analog signal conditioning.
- Voltage regulation and protection circuit components within power management modules.
MNS2N2907AUB/TR Brand Info
The MNS2N2907AUB/TR is part of the comprehensive transistor portfolio offered by the brand, recognized for delivering consistent industrial-grade components. This product line emphasizes quality, precise manufacturing control, and compliance with industry standards, ensuring dependable performance in demanding environments. The brand supports engineers with detailed datasheets and reliable supply chains, facilitating seamless integration into complex electronic systems.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current is rated at 600mA, making it suitable for medium-power applications such as switching loads and amplification within industrial electronics.
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What package type does the device come in, and what are its benefits?
This transistor is supplied in a SOT-23 surface-mount package, which supports automated PCB assembly, saves board space, and enhances thermal management compared to traditional through-hole packages.
Can this transistor be used for high-frequency applications?
Yes, with a transition frequency (fT) of approximately 100MHz, it is capable of operating efficiently in moderate high-frequency circuits, including signal amplification and switching at RF or fast digital speeds.
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What voltage levels can the transistor safely handle?
The device supports a collector-emitter voltage of up to 40V, collector-base voltage of 60V, and an emitter-base voltage of 5V, allowing compatibility with a wide range of industrial control voltages.
How does the DC current gain affect circuit design with this transistor?
The DC current gain ranges between 100 and 300, which ensures ample amplification of base current to collector current, enabling designers to drive higher load currents efficiently with minimal base drive.
